High energy ion implanter, beam current adjuster, and beam current adjustment method

ABSTRACT

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

RELATED APPLICATION

Priority is claimed to Japanese Patent Application No. 2013-240647,filed on Nov. 21, 2013, the entire content of which is incorporatedherein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a high energy ion implanter.

2. Description of the Related Art

In a semiconductor device production process, an important process isgenerally performed in which ions are implanted into a semiconductorwafer in a vacuum state so as to add impurities to crystals of thesemiconductor wafer. Accordingly, a conductive property is changed sothat the semiconductor wafer becomes a semiconductor device. Anapparatus used in this process is generally called an ion implanter thataccelerates impurity atoms as ions for the semiconductor device andimplants impurity atoms into the semiconductor wafer.

Hitherto, an apparatus for performing a high energy ion implantation byfurther deeply implanting an ion beam into the semiconductor wafer hasbeen used with the high integration and the high performance of thesemiconductor device. Such an apparatus is particularly called a highenergy ion implanter. As an example, there is known a method ofconfiguring an ion beam acceleration system by a tandem typeelectrostatic accelerator.

(Batch Type)

Further, a batch treatment type high energy ion implanter with a radiofrequency linear accelerator for performing a radio frequencyacceleration has been used for many years.

The batch treatment type ion implantation is a method of uniformlyimplanting ions into wafers while several tens of silicon wafers areloaded on the outer periphery of an aluminum disk having a diameter ofabout 1 m and the disk is rapidly rotated by 1000 revolutions perminute. In order to prevent the pop-out state of the wafer by acentrifugal force, the wafer loading portion of the disk has an angle ofabout 5° with respect to a rotation surface (a surface perpendicular toa rotation shaft). The batch treatment type ion implantation method hasa problem in which an implantation angle (an angle at which the ions areincident to the wafer) is different by about 1° between the center andthe end of the wafer (the implantation angle deviation) due to theabove-described angle and the rotation of the wafer.

In general, a die on the wafer has an ion implantation performing regionand a non-ion implantation performing region, and the non-ionimplantation performing region is covered by an organic substance calleda photoresist. Since the ions do not need to penetrate the photoresistduring the implantation, the photoresist to be coated during the highenergy ion implantation is much thickened. In the ion implantationperforming region, the photoresist is excluded by lithography. However,when the integration degree is high and the implantation region isminute, the ions are perpendicularly implanted to a bottom of a deephole surrounded by an upright photoresist wall. In the ion implantationin the structure having a high aspect ratio, the high precision ofimplantation angle is demanded.

In particular, in a case where a high-quality imaging device such as aCCD is produced, the resolution increases with the deep ionimplantation, and hence the sensitivity is improved. For this reason, asuper high energy ion implantation (3 to 8 MeV) is also performed. Inthis case, the allowed implantation angle error is about 0.1°, and abatch type apparatus with a large implantation angle deviation may notbe used.

(Single Wafer Type High Energy Ion Implanter)

Therefore, a single wafer type high energy ion implanter has beenpractically realized in recent years. In the batch type, the ion beam isuniformly implanted in the horizontal direction in a manner such thatthe beam is fixed and the wafer moves (the rotation on the disk). On thecontrary, in the single wafer type, the beam moves (so that the beamscans in the horizontal direction) and the wafer is fixed. In this type,when the scan beam is collimated, the implantation dose may be uniformwithin the wafer surface, and the implantation angle may be alsouniform. Accordingly, the problem of the implantation angle deviationmay be solved. Furthermore, the dose uniformity in the verticaldirection is realized by moving the wafer at a constant velocity in bothtypes, but the angle error does not occur in accordance with themovement.

In addition, since the single wafer type ion implanter does notuselessly consume the silicon wafer when a small number of wafers aretreated, the single wafer type ion implanter is suitable for a small lotmulti-product production, and hence a demand therefor has been increasedin recent years.

Here, in the production of the high-quality imaging device, there is aneed to meet various difficult demands in which the angle precision isneeded, the metal contamination needs to be removed, the implantationdamage (the residual crystal defect after the annealing) needs to besmall, and the implantation depth precision (the energy precision) needsto be good. Accordingly, even the single wafer type ion implanter hasmany points to be improved.

In the single wafer type high energy ion implanter of the related art,the tandem type electrostatic accelerator or the radio frequencyacceleration type heavy ion linac (the linear accelerator) has been usedas the high energy acceleration type.

The downstream side of the acceleration system is provided with anenergy filtering magnet, a beam scanner, and a parallelizing(parallelization) magnet that collimates a scan orbit by a magneticfield. Then, the beam has the same incident angle (implantation angle)with respect to the wafer at any scan position due to the parallelizingmagnet. The ion energy is up to about 3 to 4 MeV.

Further, in a part of the (single wafer type) medium current ionimplanter used in the energy region (10 to 600 keV) lower than that ofthe high energy ion implanter, an electric field parallel lens is usedwhich collimates the scan orbit by the electric field (the electrode).Since the electric field parallel lens may collimate the scan orbitwhile keeping the symmetry of the orbit, the angle precision is morecritically treated compared to the parallelizing magnet. Further, inthis apparatus, an electric field type deflection electrode called anAEF (Angular Energy Filter) is attached to the vicinity of the wafer.Since the ions subjected to a change in charge state during thetransportation of the beam or the particles generated in the beamlineare removed by the AEF, a highly pure beam may be supplied.

SUMMARY OF THE INVENTION

An exemplary object of an aspect of the present invention is to adjustan implanting beam current in a high energy ion implanter.

According to an aspect of the invention, there is provided a high energyion implanter including a high energy multistage linear accelerationunit. The high energy ion implanter further includes: a beamlinecomponent arranged upstream or downstream of the high energy multistagelinear acceleration unit to forma focus point of an ion beam; and avariable aperture device disposed at the focus point or a vicinitythereof to adjust abeam width of the ion beam in a directionperpendicular to a focusing direction of the ion beam at the focus pointin order to control an implanting beam current.

According to an aspect of the invention, there is provided a beamcurrent adjuster for an ion implanter. The beam current adjusterincludes a variable aperture device disposed at a focus point of the ionbeam or a vicinity thereof to adjust a beam width of the ion beam in adirection perpendicular to a focusing direction of the ion beam at thefocus point in order to control an implanting beam current.

According to an aspect of the invention, there is provided a beamcurrent adjustment method for a high energy ion implanter with a highenergy multistage linear acceleration unit. The method includes:focusing an ion beam at a focus point formed upstream or downstream ofthe high energy multistage linear acceleration unit; and adjusting abeam width of the ion beam in a direction perpendicular to a focusingdirection of the ion beam by using a variable aperture device disposedat the focus point or a vicinity thereof in order to control animplanting beam current.

Optional combinations of the aforementioned constituting elements, andimplementations of the invention in the form of methods, apparatuses,systems, computer programs and so forth may also be practiced asadditional modes of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will now be described, by way of example only, withreference to the accompanying drawings which are meant to be exemplary,not limiting, and wherein like elements are numbered alike in severalFigures, in which:

FIG. 1 is a schematic view illustrating a schematic layout and abeamline of a high energy ion implanter according to an embodiment;

FIG. 2A is a top view illustrating a schematic configuration of an ionbeam generation unit, and FIG. 2B is a side view illustrating theschematic configuration of the ion beam generation unit;

FIG. 3 is a top view illustrating an entire layout including a schematicconfiguration of a high energy multistage linear acceleration unit;

FIG. 4 is a block diagram illustrating a configuration of a controlsystem of a focusing/defocusing lens and the high energy multistagelinear acceleration unit obtained by linearly arranging accelerationelectric fields (gaps) of front ends of a plurality of radio frequencyresonators;

FIGS. 5A and 5B are top views illustrating a schematic configuration ofan EFM (an energy analyzing deflection electromagnet), an energy widthconfining slit, an energy analysis slit, a BM (a lateral center orbitcorrecting deflection electromagnet), a beam focusing/defocusing device,and a beam scanner (a scanner);

FIG. 6A is a top view illustrating a schematic configuration from a beamscanner to a substrate processing/supplying unit along a beamline aftera beam collimator, and FIG. 6B is a side view illustrating a schematicconfiguration from a beam scanner to a substrate processing/supplyingunit along a beamline after a beam collimator;

FIG. 7 is a schematic top view illustrating a main part of an example ofthe beam scanner;

FIG. 8 is a schematic side view illustrating a main part of an exampleof the beam scanner;

FIG. 9 is a schematic front view illustrating a structure in which anexample of the beam scanner is removably attached to a halfway positionof an ion beamline path when viewed from the downstream side;

FIG. 10 is a schematic view illustrating another aspect of a deflectionelectrode of an angle energy filter;

FIG. 11A is a schematic top view illustrating a quadrupole lens as alateral focusing lens, and FIG. 11B is a schematic front viewillustrating the quadrupole lens;

FIGS. 12A and 12B are perspective views illustrating an example of aconfiguration of an electromagnet;

FIG. 13 is a schematic view illustrating an opening and closing portionincluded in the electromagnet;

FIG. 14A is a schematic front view illustrating a resolver-faraday cuphaving substantially the same configuration as that of an injectorfaraday cup, and FIG. 14B is a schematic view illustrating an operationof the resolver-faraday cup;

FIG. 15 is a schematic front view illustrating a lateral elongatedfaraday cup;

FIG. 16A is a top view illustrating a schematic configuration from abeam focusing/defocusing device to a beam scanner according to theembodiment, and FIG. 16B is a side view illustrating a schematicconfiguration from the beam focusing/defocusing device to the beamscanner according to the embodiment;

FIG. 17 is a schematic view illustrating a relation in size among anopening width of a downstream ground electrode, an opening width of asuppression electrode, and an opening width of an upstream groundelectrode;

FIG. 18 is a schematic view illustrating another example of the beamcollimator.

FIG. 19 is a schematic view illustrating a beam current adjusteraccording to an embodiment of the invention;

FIG. 20 is a view illustrating an ion beam cross-section at an ion beamfocus point;

FIGS. 21A and 21B are schematic views illustrating a variable aperturedevice according to an embodiment of the invention;

FIG. 22 is a schematic view illustrating the arrangement of a beamcurrent adjuster according to another embodiment of the invention; and

FIG. 23 is a schematic view illustrating the arrangement of a beamcurrent adjuster according to a further embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The invention will now be described by reference to the preferredembodiments. This does not intend to limit the scope of the presentinvention, but to exemplify the invention.

Hereinafter, an example of a high energy ion implanter according to theembodiment will be described in detail. First, the reason why theinvention is contrived by the present inventor and the like will bedescribed.

(Parallel Magnet)

The following problems arise in a high energy ion implanter of therelated art that employs a parallel (collimate) magnet whichparallelizes (collimates) an orbit by a deflection magnetic field.

When a high energy ion is implanted into a photoresist-coated wafer, alarge amount of an outgas is generated. Then, an interaction occursbetween molecules of the outgas and beam ions, and hence the chargestate of some ions change. When a change in valance occurs while thebeam passes through the parallelizing magnet, a deflection angle changesand the parallelism of the beam is collapsed. Accordingly, animplantation angle with respect to the wafer is not uniform.

Further, the amount (the number or the dose) of the implanted ions maybe obtained by measuring a beam current value in a faraday cup disposednear the wafer. However, the measurement value is influenced due to achange in charge state, and hence the measurement value is deviated froma predetermined implantation dose. As a result, the expectedcharacteristics of a semiconductor device may not be obtained.

Further, in the parallelism of one parallel magnet, the inner and outerorbits have different deflection angles and different orbit lengths. Forthis reason, the ratio of the ions subjected to a change in charge stateincreases as it goes toward the outer orbit, and hence the doseuniformity inside the wafer surface is also degraded.

Thus, a recent demand for highly precise implantation may not besufficiently handled by the beam transportation type of the high energyion implanter of the related art.

Further, the parallelizing magnet needs a wide magnetic pole in the scandirection and a parallelizing section having a certain length. Since thelength and the size of the magnetic pole increase when the energyincreases, the weight of the parallelizing magnet considerablyincreases. In order to stably fix and hold the apparatus, the design forthe strength of the semiconductor factory needs to be reinforced, andthe power consumption considerably increases.

These problems may be solved when the electric field collimating lensand the electric field (the electrode type) energy filter (AEF: AngularEnergy Filter) used in the above-described medium current ion implantermay be used in the high energy region. The electric field collimatinglens aligns and collimates the scan orbit to the center orbit whilekeeping the symmetry of the orbit, and the AEF removes the ionssubjected to a change in charge state directly before the wafer.Accordingly, even when a large amount of the outgas exists, a beamwithout an energy contamination may be obtained, and hence theimplantation angle in the scan direction does not become non-uniform asin the case of the parallelizing magnet. As a result, the ions may beimplanted with an accurate implantation distribution in the depthdirection and a uniform implantation dose, and the implantation anglealso becomes uniform, thereby realizing a highly precise ionimplantation. Further, since the light-weight electrode member is used,the power consumption may be decreased compared to the electromagnet.

The point of the invention is to obtain an apparatus capable ofperforming the same highly precise implantation as that of the mediumcurrent apparatus in the high energy apparatus by introducing anexcellent system of the medium current ion implanter into the highenergy ion implanter. The problems to be solved in this trial will bedescribed below. The first problem is the length of the apparatus.

In a case where the ion beams are deflected at the same trajectory, thenecessary magnetic field is proportional to the square root of theenergy, and the necessary electric field is proportional to the energy.Thus, the length of the deflection magnetic pole is proportional to thesquare root of the energy, and the length of the deflection electrode isproportional to the energy. When the highly precise angle implantationis tried by mounting the electric field collimating lens and theelectric field AEF onto the high energy ion implanter, the beamtransportation system (the distance from the scanner to the wafer)largely increases in length compared to the apparatus of the related artthat uses the parallelizing magnet.

For example, as the high energy ion implanter that includes aparallelization mechanism using such an electric field, a structure isconsidered which is obtained by substantially linearly fixingconstituents such as an ion source, amass analysis magnet, a tandem typeelectrostatic accelerator or a radio frequency linear accelerator, abeam scanner, a scan orbit parallelization device, an energy filter, animplantation process chamber, and a substrate transportation unit (anend station) as in the case of the high energy ion implanter of therelated art. In this case, the entire length of the apparatus increaseby about 20 m compared to the apparatus of the related art having alength of about 8 m. Accordingly, it takes large effort when theinstallation place is set and prepared and the installation operation isperformed, and then the installation area also increases. Further, awork space is also needed for the alignment adjustment of the devicesand the maintenance, the repair, or the adjustment thereof after theoperation of the apparatus. Such a large ion implanter may not satisfy ademand for adjusting the size of the apparatus in the semiconductorproduction line to the actual size of the apparatus arranged in thefactory production line.

In view of such circumstances, an object of the beamline structure inthe aspect of the invention is to provide a highly precise high energyion implanter with an electric field collimating lens and an electricfield energy filter by simplifying and efficiently adjusting aninstallation place setting and preparing work, an installation work, ora maintenance work while ensuring a sufficient work area and realizing atechnique of suppressing an increase in installation area.

(U-Shaped Folded Beamline)

The object may be attained by a configuration in which the beamline ofthe high energy ion implanter includes a long line portion that isformed by a plurality of units for accelerating an ion beam generated byan ion source and a long line portion that is formed by a plurality ofunits for adjusting and implanting a scan beam into a wafer and ahorizontal U-shaped folded beamline having the long line portions facingeach other is formed. Such a layout is realized by substantiallymatching the length of the beam transportation unit including a beamscanner, a beam collimator, an energy filter, and the like to the lengthof the unit accelerating the ions from the ion source. Then, asufficiently wide space is provided between two long line portions forthe maintenance work.

An aspect of the invention is supposed based on the layout of thebeamline, and an object thereof is to provide a high energy ionimplanter capable of scanning a high energy ion beam in a rangesufficiently wider than a wafer size, instantly stopping atransportation in the event of a beam transportation failure, andnormally maintaining a highly precise implantation state by scanning ahigh energy beam with satisfactory responsiveness.

A high energy ion implanter according to an aspect of the inventionaccelerates ions generated by an ion source so as to generate an ionbeam, transports the ion beam to a wafer along a beamline, and implantsthe ion beam into a wafer, and includes: a beam generation unit thatincludes an ion source and amass analyzer; a high energy multistagelinear acceleration unit that accelerates an ion beam so as to generatea high energy ion beam; a high energy beam deflection unit that changesthe direction of the high energy ion beam toward the wafer; a beamtransportation unit that transports the deflected high energy ion beamto the wafer; and a substrate processing/supplying unit that uniformlyimplants the transported high energy ion beam into the semiconductorwafer. The beam transportation unit includes a beam focusing/defocusingdevice, a high energy beam scanner, a high energy electric field typebeam collimator, and a high energy electric field type final energyfilter. Then, the high energy ion beam emitted from the deflection unitis scanned and collimated by the beam scanner and the electric fieldtype beam collimator, mixed ions having a different mass, a differention charge state, and different energy are removed by the high energyelectric field type final energy filter, and the resultant ions areimplanted into the wafer.

In this configuration, the high energy beam scanner is configured as anelectric field type beam scanner that is operated in a finely adjustabletriangular wave. The electric field type having fast responsiveness isemployed. When a discharge or the like occurs during the ionimplantation, the beam becomes instable. Accordingly, in a case wherethe non-uniformity of the implantation dose is predicted, a system maybe obtained which instantly stops the implantation and immediatelyresumes the implantation in a stabilized state. Thus, the implantationprecision may be ensured in any case. Further, since the operationfrequency may be easily changed, the amount of the crystal defectoccurring in the silicon crystals during the ion implantation may becontrolled, and hence the quality of the product may be improved.

The electric field type beam scanner includes a pair of deflectionelectrodes, but an extremely high voltage may not be applied to theelectrodes for the fast responsiveness. However, in order to perform thehighly precise implantation that keeps the implantation dosenon-uniformity of the entire wafer surface at 0.5% or less, the scanrange needs to be sufficiently wider than the wafer size. For thisreason, the beam scanner needs to have a sufficient deflection anglewith respect to the high energy beam. Therefore, in the invention, asufficient deflection angle is obtained in a manner such that a relationof L₁≧5D₁ is satisfied when the gap between the pair of deflectionelectrodes is indicated by D₁ and the length thereof in the beamtraveling direction is indicated by L₁.

According to the aspect of the invention, the high energy ion beam maybe scanned in a range sufficiently wider than the wafer size, and hencethe highly precise implantation in which the implantation dosenon-uniformity of the entire wafer surface is suppressed to 0.5% or lessmay be performed. Further, when a problem such as the discharge of theelectrode occurs during the transportation of the beam, the high energybeam scanning operation having satisfactory responsiveness and instantlystopping the ion implantation may be performed. Accordingly, the highlyprecise implantation may be maintained.

Therefore, the high energy ion implanter according to the aspect of theembodiment is an ion implanter that accelerates the ions generated bythe ion source, transports the ions as the ion beam along the beamlineto the wafer, and implants the ions into the wafer. This apparatusincludes the high energy multistage linear acceleration unit thataccelerates the ion beam so as to generate the high energy ion beam, thedeflection unit that changes the direction of the orbit of the highenergy ion beam toward the wafer, and the beam transportation unit thattransports the deflected high energy ion beam to the wafer, and thecollimated ion beam is highly precisely irradiated to the wafer movingin a mechanical scan state so as to be implanted into the wafer.

The high energy ion beam that is emitted from the radio frequency(AC-type) high energy multistage linear acceleration unit for highlyaccelerating the ion beam includes a certain range of energydistribution. For this reason, in order to scan and collimate the highenergy ion beam of the rear stage and irradiate the high energy ion beamto the wafer moving in a mechanical scan state, there is a need toperform the highly precise energy analysis, the center orbit correction,and the beam focusing/defocusing adjustment in advance.

The beam deflection unit includes at least two highly precise deflectionelectromagnets, at least one energy width confining slit, an energyanalysis slit, and at least one lateral focusing unit. The plurality ofdeflection electromagnets are formed so as to perform the energyanalysis of the high energy ion beam, the precise correction of the ionimplantation angle, and the suppression of the energy dispersion. In thehighly precise deflection electromagnets, a nuclear magnetic resonanceprobe and a hall probe are attached to the electromagnet for the energyanalysis, and only the hall probe is attached to the otherelectromagnet. The nuclear magnetic resonance probe is used to calibratethe hall probe, and the hall probe is used for the uniform magneticfield feedback control.

The beam transportation unit may implant ions by scanning andparallelizing the high energy ion beam and highly precisely irradiatingthe high energy ion beam to the wafer moving in a mechanical scan state.

Hereinafter, an example of the high energy ion implanter according tothe embodiment will be described in more detail with reference to thedrawings. Furthermore, the same reference numerals will be given to thesame components in the description of the drawings, and the repetitivedescription of the same components will be appropriately omitted.Further, the configuration mentioned below is merely an example, anddoes not limit the scope of the invention.

(High Energy Ion Implanter)

First, a configuration of the high energy ion implanter according to theembodiment will be simply described. Furthermore, the content of thespecification may be applied to not only the ion beam as one of kinds ofcharged particles, but also the apparatus involved with the chargedparticle beam.

FIG. 1 is a schematic view illustrating a schematic layout and abeamline of a high energy ion implanter 100 according to the embodiment.

The high energy ion implanter 100 according to the embodiment is an ionimplanter that includes a radio frequency linear acceleration type ionaccelerator and a high energy ion transportation beamline, and isconfigured to accelerate ions generated by an ion source 10, transportsthe ions along the beamline to a wafer (a substrate) 200 as an ion beam,and implants the ions into a wafer 200.

As illustrated in FIG. 1, the high energy ion implanter 100 includes anion beam generation unit 12 that generates ions and separates the ionsby mass, a high energy multistage linear acceleration unit 14 thataccelerates an ion beam so as to become a high energy ion beam, a beamdeflection unit 16 that performs an energy analysis, a center orbitcorrection, and an energy dispersion control on the high energy ionbeam, a beam transportation line unit 18 that transports the analyzedhigh energy ion beam to a wafer, and a substrate processing/supplyingunit 20 that uniformly implant the transported high energy ion beam intothe semiconductor wafer.

The ion beam generation unit 12 includes the ion source 10, anextraction electrode 40, and a mass analyzer 22. In the ion beamgeneration unit 12, a beam is extracted from the ion source 10 throughthe extraction electrode and is accelerated, and the extracted andaccelerated beam is subjected to a mass analysis by the mass analyzer22. The mass analyzer 22 includes a mass analysis magnet 22 a and a massanalysis slit 22 b. There is a case in which the mass analysis slit 22 bis disposed directly behind the mass analysis magnet 22 a. However, inthe embodiment, the mass analysis slit is disposed inside the entranceof the high energy multistage linear acceleration unit 14 as the nextconfiguration.

Only the ions necessary for the implantation are selected as a result ofthe mass analysis using the mass analyzer 22, and the ion beam of theselected ions is led to the next high energy multistage linearacceleration unit 14. The direction of the ion beam that is furtheraccelerated by the high energy multistage linear acceleration unit 14 ischanged by the beam deflection unit 16.

The beam deflection unit 16 includes an energy analysis electromagnet24, a lateral focusing quadrupole lens 26 that suppresses an energydispersion, an energy width confining slit 27 (see FIGS. 5A and 5Bbelow), an energy analysis slit 28, and a deflection electromagnet 30having a steering function. Furthermore, the energy analysiselectromagnet 24 may be called an energy filter electromagnet (EFM). Thedirection of the high energy ion beam is changed by the deflection unitso as to be directed toward the substrate wafer.

The beam transportation line unit 18 is used to transport the ion beamemitted from the beam deflection unit 16, and includes a beamfocusing/defocusing device 32 formed by a focusing/defocusing lensgroup, a beam scanner 34, a beam collimator 36, and a final energyfilter 38 (with a final energy separation slit). The length of the beamtransportation line unit 18 is designed so as to match the lengths ofthe ion beam generation unit 12 and the high energy multistage linearacceleration unit 14, and the beam transportation line unit 18 isconnected to the beam deflection unit 16 so as to forma U-shaped layoutas a whole.

The substrate processing/supplying unit 20 is provided at thetermination end of the downstream side of the beam transportation lineunit 18, and the implantation process chamber accommodates a beammonitor that measures the beam current, the position, the implantationangle, the convergence/divergence angle, the vertical and horizontal iondistribution, and the like of the ion beam, a charge prevention devicethat prevents the charge of the substrate by the ion beam, a wafertransportation mechanism that carries the wafer (the substrate) 200 andinstalls the wafer at an appropriate position and an appropriate angle,an ESC (Electro Static Chuck) that holds the wafer during the ionimplantation, and a wafer scan mechanism that operates the wafer in adirection perpendicular to the beam scan direction at the velocity inresponse to a change in the implantation beam current.

In this way, the high energy ion implanter 100 that is formed byarranging the units in a U-shape ensures satisfactory workability whilesuppressing an increase in footprint. Further, in the high energy ionimplanter 100, the units or the devices are formed as a module, andhence may be attached, detached, and assembled in accordance with thebeamline reference position.

Next, the units and the devices constituting the high energy ionimplanter 100 will be described further in detail.

(Ion Beam Generation Unit)

FIG. 2A is a top view illustrating a schematic configuration of the ionbeam generation unit, and FIG. 2B is a side view illustrating aschematic configuration of the ion beam generation unit.

As illustrated in FIGS. 2A and 2B, the extraction electrode 40 thatextracts an ion beam from plasma generated inside an ion chamber (an arcchamber) is provided at the exit of the ion source 10 disposed at themost upstream side of the beamline. An extraction suppression electrode42 that suppresses electrons included in the ion beam extracted from theextraction electrode 40 from reversely flowing toward the extractionelectrode 40 is provided near the downstream side of the extractionelectrode 40.

The ion source 10 is connected to an ion source high-voltage powersupply 44. An extraction power supply 50 is connected between theextraction electrode 40 and a terminal 48. The downstream side of theextraction electrode 40 is provided with the mass analyzer 22 thatseparates predetermined ions from the incident ion beam and extracts theseparated ion beam.

As illustrated in FIGS. 5A and 5B to be described below, a faraday cup(for an injector) 80 a that measures the total beam current of the ionbeam is disposed at the foremost portion inside the linear accelerationportion housing of the high energy multistage linear acceleration unit14.

FIG. 14A is a schematic front view illustrating a resolver-faraday cup80 b having substantially the same configuration as that of the injectorfaraday cup 80 a, and FIG. 14B is a schematic view illustrating anoperation of the resolver-faraday cup 80 b.

The injector faraday cup 80 a may be extracted from the verticaldirection on the beamline by a driving mechanism, and is formed so thatan opening faces the upstream side of the beamline while having arectangular square shape in the horizontal direction. Accordingly, theinjector faraday cup is used to completely interrupt the ion beamreaching the downstream side of the beamline on the beamline ifnecessary other than the function of measuring the total beam current ofthe ion beam during the adjustment of the ion source or the massanalysis electromagnet. Further, as described above, the mass analysisslit 22 b is disposed inside the entrance of the high energy multistagelinear acceleration unit 14 directly before the injector faraday cup 80a. Further, the width of the slit may be constant or variable. If thewidth of the slit is variable, the width may be adjusted in accordancewith ion mass. The varying method of the width may be continuous,stepwise or switching a plurality of slits having different widths.

(High Energy Multistage Linear Acceleration Unit)

FIG. 3 is a top view illustrating the entire layout including theschematic configuration of the high energy multistage linearacceleration unit 14. The high energy multistage linear accelerationunit 14 includes a plurality of linear accelerators for accelerating theion beam, that is, an acceleration gap that interposes one or more radiofrequency resonators 14 a. The high energy multistage linearacceleration unit 14 may accelerate the ions by the action of the radiofrequency (RF) electric field. In FIG. 3, the high energy multistagelinear acceleration unit 14 includes a first linear accelerator 15 athat includes a basic multistage radio frequency resonator 14 a for ahigh energy ion implantation and a second linear accelerator 15 b thatincludes an additional multistage radio frequency resonator 14 a for asuper high energy ion implantation.

Meanwhile, in the ion implanter that uses the acceleration of the radiofrequency (RF), the amplitude V [kV] and the frequency f [Hz] of thevoltage need to be considered as the parameter of the radio frequency.Further, in a case where a multistage radio frequency acceleration isperformed, the phase φ [deg] of the radio frequency is added as theparameter. In addition, a magnetic field lens (for example, a quadrupoleelectromagnet) or an electric field lens (for example, an electrostaticquadrupole electrode) is needed so as to control the expansion of theion beam in the vertical and horizontal directions during or after theacceleration by the focusing/defocusing effect. Then, the optimal valuesof these operation parameters are changed by the ion energy passingtherethrough, and the strength of the acceleration electric fieldinfluences the focusing/defocusing action. For this reason, these valuesare determined after the parameter of the radio frequency is determined.

FIG. 4 is a block diagram illustrating a configuration of a controlsystem of the focusing/defocusing lens and the high energy multistagelinear acceleration unit obtained by linearly arranging the accelerationelectric fields (the gaps) at the front ends of the plurality of radiofrequency resonators.

The high energy multistage linear acceleration unit 14 includes one ormore radio frequency resonators 14 a. As the components necessary forthe control of the high energy multistage linear acceleration unit 14,an input device 52 for allowing an operator to input a necessarycondition, a control calculation device 54 that numerically calculatesvarious parameters from the input condition and controls the components,an amplitude control device 56 that adjusts the voltage amplitude of theradio frequency, a phase control device 58 that adjusts the phase of theradio frequency, a frequency control device 60 that controls thefrequency of the radio frequency, a radio frequency power supply 62, afocusing/defocusing lens power supply 66 for a focusing/defocusing lens64, a display device 68 that displays an operation parameter thereon,and a storage device 70 that stores the determined parameter are needed.Further, the control calculation device 54 stores therein a numericalcalculation code (a program) for numerically calculating variousparameter in advance.

In the control calculation device 54 of the radio frequency linearaccelerator, radio frequency parameters (an amplitude, a frequency, anda phase of a voltage) are calculated so as to obtain the optimaltransportation efficiency by simulating the acceleration, the focusing,and the defocusing of the ion beam based on the input condition and thenumerical calculation code stored therein. Also, the parameter (a Q coilcurrent or a Q electrode voltage) of the focusing/defocusing lens 64that is used to efficiently transport the ion beam is also calculated.The calculated various parameters are displayed on the display device68. The display device 68 displays a non-answerable mark for theacceleration condition that exceeds the ability of the high energymultistage linear acceleration unit 14.

The voltage amplitude parameter is transmitted from the controlcalculation device 54 to the amplitude control device 56, and theamplitude control device 56 adjusts the amplitude of the radio frequencypower supply 62. The phase parameter is transmitted to the phase controldevice 58, and the phase control device 58 adjusts the phase of theradio frequency power supply 62. The frequency parameter is transmittedto the frequency control device 60. The frequency control device 60controls the output frequency of the radio frequency power supply 62,and controls the resonance frequency of the radio frequency resonator 14a of the high energy multistage linear acceleration unit 14. Further,the control calculation device 54 controls the focusing/defocusing lenspower supply 66 by the calculated focusing/defocusing lens parameter.

The focusing/defocusing lens 64 that is used to efficiently transportthe ion beam is disposed as many as needed at a position inside theradio frequency linear accelerator or a position before and behind theradio frequency linear accelerator. That is, the defocusing lens and thefocusing lens are alternately provided at the position before and behindthe acceleration gap of the front end of the multistage radio frequencyresonator 14 a. At one side thereof, an additional longitudinal focusinglens 64 b (see FIGS. 5A and 5B) is disposed behind the lateral focusinglens 64 a (see FIGS. 5A and 5B) at the termination end of the secondlinear accelerator 15 b, adjusts the focusing and the defocusing of thehigh energy acceleration ion beam passing through the high energymultistage linear acceleration unit 14, and causes the ion beam havingan optimal two-dimensional beam profile to be incident to the beamdeflection unit 16 of the rear stage.

In the direction of the electric field generated in the acceleration gapof the radio frequency linear accelerator, the ion accelerationdirection and the ion deceleration direction change at every severaltens of nano seconds. In order to accelerate the ion beam to the highenergy, the electric field needs to be directed in the accelerationdirection when the ions enter all acceleration gaps which exist atseveral tens of places. The ions that are accelerated by a certainacceleration gap need to pass through a space (a drift space) in whichthe electric field between two acceleration gaps is shielded until theelectric field of the next acceleration gap is directed in theacceleration direction. Since the ions are decelerated even at the earlytiming or the late timing, the ions may not reach the high energy.Further, since it is a very strict condition that the ions are carriedalong the acceleration phase in all acceleration gaps, the ion beam thatreaches the predetermined energy is a resultant obtained from adifficult selection for the mass, the energy, and the charge (factorsfor determining the velocity) by the radio frequency linear accelerator.In this meaning, the radio frequency linear accelerator is also a goodvelocity filter.

(Beam Deflection Unit)

As illustrated in FIG. 1, the beam deflection unit 16 includes theenergy analysis electromagnet 24 as the energy filter deflectionelectromagnet (EFM), the energy width confining slit 27 (see FIGS. 5Aand 5B), the energy analysis slit 28, the lateral focusing quadrupolelens 26 that controls the energy dispersion at the wafer position, andthe deflection electromagnet 30 that has an implantation anglecorrection function.

FIGS. 5A and 5B are top views illustrating a schematic configuration ofthe EFM (the energy analyzing deflection electromagnet), the energywidth confining slit, the energy analysis slit, the BM (the lateralcenter orbit correcting deflection electromagnet), the beamfocusing/defocusing device, and the beam scanner (the scanner).Furthermore, the sign L illustrated in FIG. 5A indicates the centerorbit of the ion beam.

The ion beam that passes through the high energy multistage linearacceleration unit 14 enables the energy distribution by a synchrotronoscillation. Further, there is a case in which the beam having a centervalue slightly deviated from the predetermined energy may be emittedfrom the high energy multistage linear acceleration unit 14 when theacceleration phase adjustment amount is large. Therefore, the magneticfield of the energy filter deflection magnet (EFM) is set so that onlythe ions having desired energy may pass by the beam deflection unit 16to be described later, and a part of the beam selectively passes by theenergy width confining slit 27 and the energy analysis slit 28, so thatthe ion energy is adjusted to the setting value. The energy width of thepassing ion beam may be set in advance by the horizontal opening widthsof the energy width confining slit and the analysis slit. Only the ionspassing through the energy analysis slit are led to the beamline of therear stage, and are implanted into the wafer.

When the ion beam having the energy distribution is incident to theenergy filter electromagnet (EFM) of which the magnetic field iscontrolled to a uniform value by the above-described feedback loopcontrol system, the entire incident ion beam causes the energydispersion while being deflected along the designed orbit, and the ionswithin a desired energy width range pass through the energy widthconfining slit 27 provided near the exit of the EFM. At the position,the energy dispersion increases to the maximum value, and the beam sizeσ₁ (the beam size in a case where the energy spread is zero) due to theemittance decreases to the minimum value. However, the beam width causedby the energy dispersion becomes larger than the beam width caused bythe emittance. In a case where the ion beam in such a state is cut bythe slit, the spatial distribution is cut sharply, but the energydistribution has a cut shape rounded by the energy spread correspondingto 2σ₁. In other words, for example, even when the slit width is set tothe dimension corresponding to 3% of the energy spread, a part of theions having an energy difference with respect to the predeterminedimplantation energy smaller than 3% collide with the wall of the slit soas to disappear, but a part of the ions having an energy differencelarger than 3% pass through the slit.

The energy analysis slit is installed at a position where the value ofσ₁ becomes minimal. Since the value of σ₁ decreases to an ignorablevalue by the slit width at the position, the energy distribution is alsocut sharply like the space distribution. For example, even in a casewhere the opening width of the energy analysis slit is also set to thedimension (0.03 η) corresponding to 3% of the energy spread, all ionshaving an energy difference exceeding 3% and passing through the energywidth confining slit are interrupted at the position. As a result, whenthe beam having a rectangular energy distribution at first passesthrough two slits, a dome-shaped distribution is formed in which theenergy becomes a peak value at 0%, the height decreases by a half at±3%, and the energy abruptly decreases to zero. Since the number of theions having a small energy difference relatively increases, the energywidth substantially decreases compared to the case where only one energyanalysis slit is provided and the ion beam passes through the slit whilehaving a substantially rectangular energy distribution.

In the double slit system, when the energy of the beam accelerated bythe linac is slightly deviated from the predetermined implantationenergy by the effect of cutting the end of the energy distribution,there is an effect that the energy deviation of the passed beamdecrease. For example, in a case where the energy deviation is 3% whenthe energy spread is ±3%, the positive side of the energy having thedome-shaped distribution in the energy distribution of the ion beampassing through the double slit becomes a half, and hence a differencebetween an actual energy gravity center and an ideal energy gravitycenter approximately becomes ΔE/E=1%. Meanwhile, when the ion beam iscut by the single energy analysis slit, the difference between an actualenergy gravity center and an ideal energy gravity center approximatelybecomes ΔE/E=1.5%. The effect of rounding the distribution isessentially exhibited in a direction in which the deviation of theenergy center is suppressed.

In this way, in order to improve the energy precision by decreasing boththe energy spread and the deviation of the energy center using theacceleration system having both the energy spread and the energydeviation, the limitation of the energy using the double slit iseffective.

Since the energy analysis electromagnet needs high magnetic fieldprecision, highly precise measurement devices 86 a and 86 b forprecisely measuring the magnetic field are provided (see FIG. 5B). Themeasurement devices 86 a and 86 b use the MRP to calibrate the hallprobe and uses the hall probe to control the constant magnetic fieldfeedback control by the appropriate combination of the nuclear magneticresonance (NMR) probe called the magnetic resonance probe (MRP) and thehall probe. Further, the energy analysis electromagnet is produced byhigh precision so that the non-uniformity of the magnetic field becomessmaller than 0.01%. Further, each electromagnet is connected with apower supply having current setting precision and current stability of1×10⁻⁴ or more and a control device thereof.

Further, the quadrupole lens 26 as the lateral focusing lens is disposedbetween the energy analysis slit 28 and the energy analysiselectromagnet 24 at the upstream side of the energy analysis slit 28.The quadrupole lens 26 may be formed in an electric field type or amagnetic field type. Accordingly, since the energy dispersion issuppressed after the ion beam is deflected in a U-shape and the beamsize decreases, the beam may be transported with high efficiency.Further, since the conductance decreases at the magnetic pole portion ofthe deflection electromagnet, it is effective to dispose a vacuum pumpexhausts outgas in the vicinity of, for example, the energy analysisslit 28. In a case where a magnetically levitated turbo molecular pumpis used, the pump needs to be provided at a position where the pump isnot influenced by the leakage magnetic field of the electromagnet of theenergy analysis electromagnet 24 or the deflection electromagnet 30. Bythe vacuum pump, the beam current degradation due to the scattering ofthe remaining gas at the deflection unit is prevented.

When there is a large installation error in the quadrupole lens in thehigh energy multistage linear acceleration unit 14, the dispersionadjusting quadrupole lens 26, or the beam focusing/defocusing device 32,the center orbit of the beam illustrated in FIG. 5B is distorted, andthe beam may easily disappear while contacting the slit. As a result,the final implantation angle and the final implantation position arealso wrong. Here, the center orbit of the beam essentially passesthrough the center of the beam scanner 34 on the horizontal plane due tothe magnetic field correction value of the deflection electromagnet 30having an implantation angle correction function. Accordingly, thedeviation of the implantation angle is corrected. Further, when anappropriate offset voltage is applied to the beam scanner 34, thedistortion of the center orbit from the scanner to the wafer disappears,and hence the horizontal deviation of the implantation position issolved.

The ions that pass through the deflection electromagnets of the beamdeflection unit 16 are subjected to a centrifugal force and a Lorentzforce, and hence draws a circular-arc orbit by balance of these forces.When this balance is represented by a relation, a relation of mv=qBr isestablished. Here, m indicates the mass of the ion, v indicates thevelocity of the ion, q indicates the charge state of the ion, Bindicates the magnetic flux density of the deflection electromagnet, andr indicates the curvature radius of the orbit. Only the ions in whichthe curvature radius r of the orbit matches the curvature radius of themagnetic center of the deflection electromagnet may pass through thedeflection electromagnet. In other words, in a case where the ions havethe same charge state, the ions that may pass through the deflectionelectromagnet applied with the uniform magnetic field B are only theions having the specific momentum mv. The EFM is called the energyanalysis electromagnet, but is actually a device that is used to analyzethe momentum of the ion. The BM or the mass analysis electromagnet ofthe ion generation unit is the momentum filter.

Further, the beam deflection unit 16 may deflect the ion beam by 180°just by using a plurality of magnets. Accordingly, the high energy ionimplanter 100 in which the beamline has a U-shape may be realized by asimple configuration.

As illustrated in FIG. 5A, the beam deflection unit 16 deflects the ionbeam emitted from the high energy multistage linear acceleration unit 14by 90° using the energy analysis electromagnet 24. Then, the beam pathis further deflected by 90° using the deflection electromagnet 30 thatis also used to correct the orbit, and is incident to the beamfocusing/defocusing device 32 of the beam transportation line unit 18 tobe described later. The beam focusing/defocusing device 32 focuses ordefocuses the incident beam and supplies the beam to the beam scanner34. Further, the defocusing of the beam due to the energy dispersion isprevented by the lens effect of the quadrupole lens 26 illustrated inFIG. 5B or an extreme decrease in the size of the beam is prevented byusing the beam expansion effect based on the energy dispersion.

FIG. 11A is a schematic top view illustrating a quadrupole lens as alateral focusing lens, and FIG. 11B is a schematic front viewillustrating the quadrupole lens. The top view of FIG. 11A illustratesthe electrode length in the beamline traveling direction of thequadrupole lens 26 and the effect in which the beam that defocuseslaterally with respect to the beam of the energy selected by the energyanalysis electromagnet (the EFM deflection magnet) 24 focuses laterallyby the quadrupole lens 26. The front view of FIG. 11B illustrates thelateral focusing effect of the beam based on the focusing/defocusingaction of the electrode of the quadrupole lens 26.

As described above, the beam deflection unit 16 performs the deflectionof the ion beam by 180° by a plurality of electromagnets between thehigh energy multistage linear acceleration unit 14 and the beamtransportation line unit 18 in the ion implanter that accelerates theions generated from the ion source and transports the ions to the waferso as to implant the ions thereto. That is, the energy analysiselectromagnet 24 and the orbit correction deflection electromagnet 30are respectively formed so as to have deflection angles of 90°. As aresult, the total deflection angle becomes 180°. Furthermore, the amountof the deflection performed by one magnet is not limited to 90°, and maybe the following combination.

(1) One magnet having deflection amount of 90°+two magnets havingdeflection amounts of 45°

(2) Three magnets having deflection amounts of 60°

(3) Four magnets having deflection amounts of 45°

(4) Six magnets having deflection amounts of 30°

(5) One magnet having deflection amount of 60°+one magnet havingdeflection amount of 120°

(6) One magnet having deflection amount of 30°+one magnet havingdeflection amount of 150°

The beam deflection unit 16 as the energy analysis unit is a foldingpath in the U-shaped beamline, and the curvature radius r of thedeflection electromagnet forming the unit is an important parameter thatlimits the maximum energy of the beam to be transported and determinesthe entire width of the apparatus or the width of the center maintenancearea (see FIGS. 5A and 5B). When the value is optimized, an increase inthe entire width of the apparatus is suppressed without decreasing themaximum energy. Then, the gap between the high energy multistage linearacceleration unit 14 and the beam transportation line unit 18 iswidened, so that a sufficient work space R1 is ensured (see FIG. 1).

FIGS. 12A and 12B are perspective views illustrating an example of aconfiguration of the electromagnet. FIG. 13 is a schematic viewillustrating an opening and closing portion provided in theelectromagnet. For example, as illustrated in FIGS. 12A and 12B, theelectromagnet forming the energy analysis electromagnet 24 or thedeflection electromagnet 30 includes an upper yoke 87, a lower yoke 88,inner and outer yokes 89 a and 89 b, an upper pole (not illustrated), alower pole 93, an upper coil 91 a, and a lower coil 91 b. Further, asillustrated in FIG. 13, the outer yoke 89 b is divided into two members89 b 1 and 89 b 2, and the two members may be opened outward as foldingdouble doors by opening and closing portions 92 a and 92 b. Then, a beamguide container (not illustrated) forming the beamline may be removablyattached thereto.

Further, the vacuum container (chamber) of the center portion of thebeam deflection unit 16, for example, the container accommodating theenergy width confining slit 27, the quadrupole lens 26, the energyanalysis slit 28, and the like may be easily attached to and detachedfrom the beamline. Accordingly, it is possible to simply enter and exitthe work area of the center of the U-shaped beamline during themaintenance work.

The high energy multistage linear acceleration unit 14 includes aplurality of linear accelerators that accelerate the ions. Each of theplurality of linear accelerators includes a common connection portion,and the connection portion may be removably attached to the energyanalysis electromagnet 24 located at the upstream side in relation tothe energy analysis slit 28 in the plurality of electromagnets.Similarly, the beam transportation line unit 18 may be removablyattached to the deflection electromagnet 30.

Further, the energy analysis electromagnet 24 that is installed at theupstream side of the energy analysis slit 28 and includes theelectromagnet may be formed so as to attached and detached or connectedto the upstream high energy multistage linear acceleration unit 14.Further, in a case where the beam transportation line unit 18 to bedescribed later is configured as a module type beamline unit, thedeflection electromagnet 30 that is installed at the downstream side ofthe energy analysis slit 28 may be attached and detached or connected tothe downstream beam transportation line unit 18.

The linac and the beam deflection unit are respectively disposed onplane trestles, and are formed so that the ion beam orbit passingthrough the units are substantially included in one horizontal plane(the orbit after the deflection of the final energy filter is excluded).

(Beam Transportation Line Unit)

FIG. 6A is a top view illustrating a schematic configuration from thebeam scanner to the substrate processing/supplying unit along thebeamline after the beam collimator, and FIG. 6B is a side viewillustrating a schematic configuration from the beam scanner to thesubstrate processing/supplying unit along the beamline after the beamcollimator.

Only the necessary ion species are separated by the beam deflection unit16, and the beam that is formed only by the ions having a necessaryenergy value is focused or defocused in a desired cross-sectional shapeby the beam focusing/defocusing device 32. As illustrated in FIGS. 5A to6B, the beam focusing/defocusing device 32 is configured as (an electricfield type or a magnetic field type) focusing/defocusing lens group suchas a Q (quadrupole) lens. The beam having a focused/defocusedcross-sectional shape is scanned in a direction parallel to the surfaceof FIG. 1A by the beam scanner 34. For example, the beamfocusing/defocusing device is configured as a triplet Q lens groupincluding a lateral focusing (longitudinal defocusing) lens QF/a lateraldefocusing (a longitudinal focusing) lens QD/a lateral focusing (alongitudinal defocusing) lens QF. If necessary, the beamfocusing/defocusing device 32 may be configured by each of the lateralfocusing lens QF and the lateral defocusing lens QD or the combinationthereof.

As illustrated in FIGS. 5A and 5B, the faraday cup 80 b (called aresolver-faraday cup) for measuring the total beam current of the ionbeam is disposed at a position directly before the beamfocusing/defocusing device 32 of the foremost portion inside the scannerhousing.

FIG. 14A is a schematic front view illustrating the resolver-faraday cup80 b, and FIG. 14B is a schematic view illustrating an operation of theresolver-faraday cup 80 b.

The resolver-faraday cup 80 b is formed so as to be extracted in thevertical direction on the beamline by a driving mechanism, and is formedso that the opening faces the upstream side of the beamline while havinga rectangular square shape in the horizontal direction. Theresolver-faraday cup is used to completely interrupt the ion beam thatreaches the downstream side of the beamline if necessary other than thepurpose of measuring the total beam current of the ion beam during theadjustment of the linac and the beam deflection portion. Further, theresolver-faraday cup 80 b, the beam scanner 34, a suppression electrode74, and ground electrodes 76 a, 78 a, and 78 b are accommodated in ascanner housing 82.

The beam scanner 34 is a deflection scan device (called a beam scanner)that causes the ion beam to periodically scan the horizontal directionperpendicular to the ion beam traveling direction in a reciprocatingmanner by the periodically changing electric field.

The beam scanner 34 includes a pair of (two) counter scan electrodes(bipolar deflection scan electrodes) that are disposed so as to faceeach other with the ion beam passage region interposed therebetween inthe beam traveling direction. Then, a scan voltage that changes topositive and negative values at a predetermined frequency in the rangeof 0.5 Hz to 4000 Hz and is approximated to the triangular wave isapplied to two counter electrodes positive and negative inversely. Thescan voltage generates a changing electric field that deflects the beampassing through the gap between two counter electrodes. Then, the beamthat passes through the gap is scanned in the horizontal direction bythe periodic change of the scan voltage.

The amount of the crystal damage generated inside the silicon waferduring the high energy ion implantation is inverse proportional to thescan frequency. Then, there is a case in which the amount of the crystaldamage influences the quality of the produced semiconductor device. Insuch a case, the quality of the produced semiconductor device may beimproved by freely setting the scan frequency.

Further, an offset voltage (a fixed voltage) is superimposed on the scanvoltage in order to correct the amount of the beam positional deviationmeasured directly near the wafer in a state where the scan voltage isnot applied thereto. Accordingly, the scan range is not deviated in thehorizontal direction due to the offset voltage, and hence thebilaterally symmetrical ion implantation may be performed.

The suppression electrode 74 that includes an opening in the ion beampassage region is disposed between two ground electrodes 78 a and 78 bat the downstream side of the beam scanner 34. The ground electrode 76 ais disposed before the scan electrode at the upstream side thereof, butif necessary, the suppression electrode having the same configuration asthat of the downstream side may be disposed. The suppression electrodesuppresses the intrusion of electrons to the positive electrode.

Further, a ground shielding plate 89 is disposed at each of the upperand lower sides of deflection electrodes 87 a and 87 b. The groundshielding plate prevents the secondary electrons accompanied by the beamfrom flowing to the positive electrode of the beam scanner 34 from theoutside. The power supply of the scanner is protected by the suppressionelectrode and the ground shielding plate, and hence the orbit of the ionbeam is stabilized.

A beam parking function is provided at the rear side of the beam scanner34. The beam parking function is formed so that the ion beam passingthrough the beam scanner is largely deflected in the horizontaldirection if necessary so as to be led to the beam dump.

The beam parking function is a system that instantly stops thetransportation of the beam within 10 μs in a case where an implantationerror such as a dose uniformity error occurs when an unexpected problemsuch as a discharge of an electrode occurs during the ion implantationand an implantation operation is continued. In fact, at the moment inwhich the noticeable degradation in the beam current is detected, theoutput voltage of the beam scanner power supply is increased to 1.5times the voltage corresponding to the maximum scan width, and the beamis led to the beam dump near the parallelizing lens. The beamirradiation position on the wafer at the moment in which the problemoccurs is stored, and the beam is returned to the original orbit at themoment in which the wafer moves for the scanning operation in thevertical direction moves to the position after the problem is solved,thereby continuing the ion implantation as if no problem occurs.

In this way, the power supply having high responsiveness may not supplya high voltage (due to the main problem in cost). Meanwhile, in order toobtain the uniformity of the high-degree implantation dose, the scanrange needs to be wider than the wafer. For this reason, the beamscanner needs to have an ability of sufficiently deflecting the highenergy beam. This may be realized when the gap and the length of thedeflection electrode of the beam scanner are limited. In the energyregion of the invention, the electrode length may be five times or morethe gap.

A beam drift space portion is provided in a long section at thedownstream side of the beam scanner 34 inside the scan housing, andhence a sufficient scan width may be obtained even when the beam scanangle is narrow. At the rear side of the scan housing located at thedownstream side of the beam drift space portion, the deflected ion beamis adjusted to be directed to the direction of the ion beam before thebeam is deflected. That is, the beam collimator 36 is installed whichcurves the beam so as to be parallel to the beamline.

Since the aberration (a difference in focal distance between the centerportion of the beam collimator and left and right ends) generated in thebeam collimator 36 is proportional to the square of the deflection angleof the beam scanner 34, the aberration of the beam collimator may belargely suppressed when the beam drift space portion is increased inlength and the deflection angle is decreased. If the aberration islarge, the center portion and the left and right ends have differentbeam sizes and beam divergence angles when the ion beam is implantedinto the semiconductor wafer, and hence the quality of the productbecomes non-uniform.

Further, when the length of the beam drift space portion is adjusted,the length of the beam transportation line unit may match the length ofthe high energy multistage linear acceleration unit 14.

FIG. 7 is a schematic top view illustrating a main part of an example ofthe beam scanner. FIG. 8 is a schematic side view illustrating a mainpart of an example of the beam scanner. FIG. 9 is a schematic front viewillustrating a structure in which an example of the beam scanner isremovably attached to the halfway position of the ion beamline whenviewed from the downstream side.

As illustrated in FIGS. 7 and 8, in a beam scanner 134, a pair ofdeflection electrodes 128 and 130 and ground electrodes 132 and 133assembled near the upstream and downstream sides thereof areaccommodated and installed inside a box 150. An upstream opening (notillustrated) and an opening 152A larger than the opening of the groundelectrode 133 are respectively provided at the positions correspondingto the openings of the ground electrodes 132 and 133 at the upstreamside surface and the downstream side surface of the box 150.

The connection between the deflection electrode and the power supply isrealized in the feed through structure. Meanwhile, the upper surface ofthe box 150 is provided with a terminal and a ground terminal used toconnect the deflection electrodes 128 and 130 to the power supply.Further, a handle which is suitable for the attachment or thetransportation is provided at each of side surfaces of the box 150parallel to the beam axis. Furthermore, the box 150 is provided with avacuum exhaust opening that decreases the pressure inside the beamscanner 134, and the vacuum exhaust opening is connected to a vacuumpump (not illustrated).

As illustrated in FIG. 9, the box 150 is slidably provided in a beamguide box 170 fixed onto a trestle 160. The beam guide box 170 issufficiently larger than the box 150, and the bottom portion thereof isprovided with two guide rails for sliding the box 150. The guide railextends in a direction perpendicular to the beam axis, and the sidesurface of the beam guide box 170 of one end side thereof may be openedand closed by a door 172. Accordingly, the box 150 may be simplyextracted from the beam guide box 170 during the repair and the check ofthe beam scanner 134. Furthermore, in order to lock the box 150press-inserted into the beam guide box 170, the other end of the guiderail is provided with a locking mechanism (not illustrated).

The scanner peripheral unit members are work targets during themaintenance of the beamline, and the maintenance work may be easilyperformed from the work space R1. Similarly, the maintenance work of thehigh energy multistage linear acceleration unit 14 may be easilyperformed from the work space R1.

The beam collimator 36 is provided with an electric field collimatinglens 84. As illustrated in FIGS. 6A and 6B, the electric fieldcollimating lens 84 includes a plurality of acceleration electrode setsand a plurality of deceleration electrode sets substantially having ahyperbolic shape. Each of the pair of electrodes faces each other withan acceleration-deceleration gap interposed therebetween and having awidth not causing a discharge, and the acceleration-deceleration gapforms an electric field that is strengthened in proportional to adistance between the reference axis and the axial element causing theacceleration or deceleration of the ion beam and having an element ofinfluencing the lateral focusing of the ion beam.

The downstream electrode in the pair of electrodes with the accelerationgap interposed therebetween and the upstream electrode of thedeceleration gap are formed as an integrated structure and thedownstream electrode of the deceleration gap and the upstream electrodeof the next acceleration gap are formed as an integrated structure so asto have the same potential. As illustrated in FIG. 6B, each of thestructures includes an upper unit and a lower unit, and a space portionthrough which the ion beam passes is formed between the upper unit andthe lower unit.

From the upstream side of the electric field collimating lens 84, thefirst electrode (the incident electrode) and the final electrode (theemission electrode) are maintained at the ground potential. Accordingly,the energy of the beam at the positions before and behind thecollimating lens 84 does not change.

In the intermediate electrode structure, the exit electrode of theacceleration gap and the entrance electrode of the deceleration gap areconnected with a negative power supply 90 having a variable constantvoltage, and the exit electrode of the deceleration gap and the entranceelectrode of the acceleration gap are connected with a positive powersupply having a variable constant voltage (at the n-stage, negative,positive, negative, positive, negative, and the like). Accordingly, theion beam is gradually directed toward a direction parallel to thetrajectory center of the beamline while being accelerated anddecelerated repeatedly. Finally, the ion beam reaches the orbit parallelto the ion beam traveling direction (the beamline orbit direction)before the deflection scanning operation.

In this way, the beam that is scanned by the beam scanner 34 becomesparallel to the axis (the reference axis) of the deflection angle 0°parallel to the ion beam traveling direction (the beamline orbitdirection) before the scan operation by the beam collimator 36 includingthe electric field collimating lens and the like. At this time, the scanregion is formed so as to be bilaterally symmetrical to each other withrespect to the reference axis.

The ion beam that is emitted from the electric field collimating lens 84is sent to the electric field final energy filter 38 (AEF (94): AngularEnergy Filter). In the final energy filter 94, a final analysis isperformed on the energy of the ion beam to be directly implanted intothe wafer, only the ion species having a necessary energy value areselected, and the neutralized particles or the ions having a differention charge state are removed. The final energy filter 94 of the electricfield deflection is configured as a plate-shaped deflection electrodeincluding a pair of plane or curved surfaces facing each other in thevertical direction of the beamline orbit direction, is curved downwardby the deflection action of the final energy filter 94 in the verticaldirection of the beamline orbit direction, and is curved so as to matchthe ion beam orbit.

As illustrated in FIGS. 6A and 6B, the electric field deflectionelectrode is configured as a pair of AEF electrodes 104, and is disposedso that the ion beam is interposed from the vertical direction. In thepair of AEF electrodes 104, a positive voltage is applied to the upperAEF electrode 104, and a negative voltage is applied to the lower AEFelectrode 104. During the deflection by the electric field, the ion beamis deflected downward by about 10 to 20° by the action of the electricfield generated between the pair of AEF electrodes 104, and hence onlythe ion beam having target energy is selected. As illustrated in FIG.6B, only the ion beam having a charge state selected in the final energyfilter 94 is deflected downward at the set orbit angle. The beam that isformed by only the ions selected in this way is uniformly irradiated tothe wafer 200 as the irradiation target at an accurate angle.

In a case where the high energy beam is actually deflected, a pair ofplate-shaped deflection electrodes 204 facing each other in the verticaldirection is divided into n number of segments in the longitudinaldirection in accordance with the deflection angle and the curvatureradius when the deflection electrodes are curved so as to match the ionbeam orbit as illustrated in FIG. 10. Thus, the production precision orthe economic efficiency is excellent in the plate-shaped electrode ofwhich the upper electrode and the lower electrode are maintained at thesame potential. Further, the plate-shaped deflection electrode that isdivided into n number of segments in the longitudinal direction may beformed as n number of upper and lower plate-shaped electrodes set todifferent potentials other than the configuration in which the upperelectrode and the lower electrode are maintained at the same potential.

With such a structure, the electric field type energy filter may bemounted on the high energy scan beam transportation line. Since the beamis deflected in a direction perpendicular to the beam scan surface bythe electric field, the energy analysis may be performed withoutinfluencing the implantation ion density distribution (the uniformity)in the beam scan direction.

Further, in addition to the mounted final energy filter, the beamline isequipped with three kinds of beam filters, that is, the radio frequencylinear accelerator of the high energy multistage linear accelerationunit 14, the magnetic field type EFM (the energy analysis electromagnet24) and the BM (the deflection electromagnet 30) of the U-shapeddeflection portion, and the final energy filter. As described above, theradio frequency linear accelerator is the velocity (v) filter, the EFMand the BM are the momentum (mv) filters, and the final energy filter isthe energy (mv²/2) filter as its name. In this way, when the differenttriple filters are used, a very pure ion beam that has high energypurity compared to the related art and has a small amount of particlesor metal contamination may be supplied to the wafer.

Furthermore, in function, the EFM removes the energy contaminationsneaking through the radio frequency linear accelerator or limits theenergy width with high resolution, and the AEF mainly removes the ionssubjected to a change in charge state by the resist outgas by the beamtransportation line unit after the energy analysis using the EFM withcomparatively low resolution.

The final energy filter 94 includes a ground electrode 108 that isprovided at the upstream side of the final energy filter 94 and anelectrode set provided with an AEF suppression electrode 110 providedbetween two ground electrodes at the downstream side. The AEFsuppression electrode 110 suppresses the intrusion of the electrons tothe positive electrode.

Dose cups 122 that are disposed at the left and right ends of the mostdownstream ground electrode of the final energy filter 94 measure theamount of the beam current to be implanted based on the dose amount.

(Substrate Processing/Supplying Unit)

In FIG. 6A, the arrow near the wafer 200 indicates the beam scanned inthe arrow direction. Then, in FIG. 6B, the arrow near the wafer 200indicates the reciprocation movement, that is, the mechanical scanningoperation of the wafer 200 in the arrow direction. That is, when thebeam is scanned in a reciprocating manner in, for example, one axialdirection, the wafer 200 is driven by a driving mechanism (notillustrated) so that the wafer moves in a reciprocating manner in adirection perpendicular to the one axial direction.

The substrate processing/supplying unit 20 that supplies the wafer 200to a predetermined position and performs an ion implantation thereon isaccommodated in a process chamber (an implantation process chamber) 116.The process chamber 116 communicates with an AEF chamber 102. An energydefining slit (EDS) 118 is disposed inside the process chamber 116. Theenergy defining slit 118 is formed as a slit that is laterally long inthe scan direction in order to separate only the ion beam having ameaningful energy value and a meaningful charge state and passingthrough the AEF by limiting the passage of the ion beam having anon-meaningful energy value and a non-meaningful charge state. Further,the energy defining slit 118 forms a slit body by a movable member inthe vertical direction so as to adjust the separation gap of the slit,and may be used for various measurement purposes such as an energyanalysis or an implantation angle measurement. Further, the movableupper and lower change slit members include a plurality of slitsurfaces, and the slit width may be changed to a desired slit width in amanner such that the slit surfaces are changed and the axes of the upperand lower slits are adjusted or rotated in the vertical direction. Aconfiguration may be also employed which decreases the crosscontamination by sequentially changing the plurality of slit surfaces inresponse to the ion type.

A plasma shower 120 supplies low-energy electrons to the entire surfaceof the wafer 200 and the ion beam on the orbit in response to the beamcurrent amount of the ion beam, and suppresses the charge-up of thepositive charge generated in the ion implantation. Furthermore, a dosecup (not illustrated) that measures the dose amount may be disposed ateach of left and right ends of the plasma shower 120 instead of the dosecups 122 disposed at the left and right ends of the most downstreamground electrode of the final energy filter 94.

A beam profiler 124 includes a beam profiler cup (not illustrated) thatmeasures the beam current at the ion implantation position. The beamprofiler 124 measures the ion beam density at the ion implantationposition in the beam scan range while moving in the horizontal directionbefore the ion implantation. In a case where the predictednon-uniformity (PNU) of the ion beam does not satisfy the request of theprocess as a result of the beam profile measurement, the PNU isautomatically adjusted to satisfy the process condition by correctingthe control function of the application voltage of the beam scanner 34.Further, a configuration may be also employed in which a verticalprofile cup (not illustrated) is provided in parallel to the beamprofiler 124, the beam shape and the beam X-Y position are measured, thebeam shape at the implantation position is checked, and the implantationangle or the beam divergence angle is checked by the combination of thebeam width, the beam center position, and the divergence mask.

A lateral elongated faraday cup 126 with a beam current measurementfunction capable of measuring the ion beam in the scan range in thewafer region is disposed at the most downstream side of the beamline,and is configured to measure the final setup beam. FIG. 15 is aschematic front view illustrating the lateral elongated faraday cup.Furthermore, in order to reduce the cross contamination, the lateralelongated faraday cup 126 may include a changeable bottom surface of afaraday cup of a tripe surface structure capable of changing threesurfaces of a triangular prism in response to the ion type. Further, aconfiguration may be also employed in which a vertical profile cup (notillustrated) is provided in parallel to the lateral elongated faradaycup 126, the beam shape or the vertical beam position is measured, andthe implantation angle or the beam divergence angle in the verticaldirection at the implantation position is monitored.

As described above, the high energy ion implanter 100 is formed so thatthe units are disposed in a U-shape so as to surround the work space R1as illustrated in FIG. 1. For this reason, a worker in the work space R1may perform the replacement, the maintenance, and the adjustment of theparts of many units.

(Consideration of Entire Layout, Maintenance Workability,Manufacturability, and Global Environment)

The high energy ion implanter 100 according to the embodimentaccelerates the ion beam generated in the ion beam generation unit 12 bythe high energy multistage linear acceleration unit 14, changes thedirection of the ion beam by the beam deflection unit 16, and irradiatesthe ion beam to the substrate existing in the substrateprocessing/supplying unit 20 provided at the termination end of the beamtransportation line unit 18.

Further, the high energy ion implanter 100 includes the high energymultistage linear acceleration unit 14 and the beam transportation lineunit 18 as the plurality of units. Then, the high energy multistagelinear acceleration unit 14 and the beam transportation line unit 18 aredisposed so as to face each other with the work space R1 illustrated inFIG. 1 interposed therebetween. Accordingly, since the high energymultistage linear acceleration unit 14 and the beam transportation lineunit 18 disposed substantially linearly in the apparatus of the relatedart are disposed in a folded state, an increase in the entire length ofthe high energy ion implanter 100 may be suppressed. Further, thecurvature radiuses of the plurality of deflection electromagnets formingthe beam deflection unit 16 are optimized so as to minimize the width ofthe apparatus. With such a configuration, the installation area of theapparatus is minimized, and the maintenance or the like of the highenergy multistage linear acceleration unit 14 or the beam transportationline unit 18 may be performed in the work space R1 interposed betweenthe high energy multistage linear acceleration unit 14 and the beamtransportation line unit 18.

Further, the plurality of units constituting the high energy ionimplanter 100 includes the ion beam generation unit 12 that is providedat the upstream side of the beamline and generates the ion beam, thesubstrate processing/supplying unit 20 that is provided at thedownstream side of the beamline and supplies the substrate so as toperform a process in which ions are implanted into the substrate, andthe beam deflection unit 16 that is provided at the halfway position ofthe beamline from the ion beam generation unit 12 toward the substrateprocessing/supplying unit 20 and deflects the orbit of the ion beam.Then, the ion beam generation unit 12 and the substrateprocessing/supplying unit 20 are disposed at one side of the entirebeamline, and the beam deflection unit 16 is disposed at the other sideof the entire beamline. Accordingly, since the ion source 10 that needsto be subjected to the maintenance within a comparatively short time andthe substrate processing/supplying unit 20 that needs to supply andacquire the substrate are disposed so as to be adjacent to each other,the movement area of the worker may be small.

Further, the high energy multistage linear acceleration unit 14 includesa plurality of linear accelerators that accelerate the ions, and each ofthe plurality of linear accelerators may include a common connectionportion. Accordingly, the number or the type of the linear acceleratormay be easily changed in response to the energy necessary for the ionsimplanted into the substrate.

Further, the beam scanner 34 as the scanner device and the beamcollimator 36 as the collimating lens device may include astandard-shaped connection portion with respect to the adjacent units.Accordingly, the number or the type of the linear accelerator may beeasily changed. Then, the beam scanner 34 or the beam collimator 36 maybe selected in response to the configuration and the number of thelinear accelerator included in the high energy multistage linearacceleration unit 14.

Further, in the high energy ion implanter 100, the alignment (thepositional adjustment) of the beam may be performed by integrating thevacuum chamber and the frame of each device and performing the assemblyin accordance with the reference position of the vacuum chamber or theframe of the device. Accordingly, the troublesome alignment operationmay be minimized, and the device set-up time may be shortened.Accordingly, the deviation of the axis caused by the mistake in work maybe suppressed. Further, the alignment of the vacuum chambers may beperformed by the unit of the module. Accordingly, the work load may bereduced. Further, the size of the modulated device may be decreased tobe equal to or smaller than the size in which the device may easilymove. Accordingly, the relocation load of the module or the high energyion implanter 100 may be reduced.

Further, the high energy ion implanter 100 may be formed so that thehigh energy multistage linear acceleration unit 14, the beamtransportation line unit 18, the exhaust device, and the like areassembled to a single trestle. Further, the high energy ion implanter100 is formed so that the high energy multistage linear accelerationunit 14, the beam deflection unit 16, and the beam transportation lineunit 18 are included in one plane on the plane base. Accordingly, sinceeach block of the high energy ion implanter 100 may be directlytransported while the blocks are fixed onto one plane base, a deviationin adjustment hardly occurs, and hence an effort for re-adjusting theblocks on site may be reduced. For this reason, it is possible toprevent an uneconomical problem in which many experts are sent to theinstallation site for a long period of time.

Further, when the plane base is formed in the middle portion of thetrestle instead of the floor thereof, only the devices directly involvedwith the ion beam orbit may be mounted onto the plane base. Then, when acomponent such as a radio frequency cubic circuit as an auxiliary devicemay be assembled in the space formed below the plane base, the spaceutilization efficiency may be improved, and hence the ion implanterhaving a compacter size may be realized.

Thus, the high energy ion implanter 100 may be also installed in a sitewhere a sufficient installation place is not ensured, and may be used ina manner such that the high energy ion implanter is transported to ademanded place in a state where the apparatus is assembled and adjustedinside a production factory, is fixed at the installation site, and isused by the final adjustment. Further, the high energy ion implanter 100may realize the high energy ion implantation while satisfying thestandard level of the semiconductor production line of the semiconductorproduction factory.

In this way, the high energy ion implanter 100 may be decreased in sizecompared to the related art by examining the layout of the units or thedevices, and hence may have an installation length that is about a halfof the size of the related art. Further, the ion implanter according tothe embodiment may be operated in a manner such that the components areassembled to the bases inside the production factory, are loaded in atransportation vehicle to be transported to the installation site whilethe ion beam orbit is established through the positional adjustment onthe bases, are fixed to the trestles, and then the deviation inadjustment is finely adjusted to be removed. For this reason, the ionimplanter may be remarkably easily and reliably adjusted on site by aperson who is not an expert, and hence the set-up time may be shortened.

Further, when the layout like the elongated U-shaped folded beamline isemployed, the ion implanter capable of highly precisely implanting thehigh energy ions of 5 to 8 MeV in maximum may be realized. Further, theion implanter includes a small installation area and a sufficientmaintenance area by the layout having a center passage (a centerregion). Further, the power consumption may be decreased by thelow-power consumption operation using the electric field parallel lens,the electric field type scanner, the electric field AEF, and the likeduring the operation of the ion implanter. In other words, the ionimplanter according to the embodiment may perform the low-powerconsumption operation by employing the scan beam parallelizationmechanism using the electric field deflection type collimating lensdevice.

While the invention has been described by referring to theabove-described embodiment, the invention is not limited to theabove-described embodiment, and the appropriate combination of theconfigurations of the embodiment or the substitution thereof is alsoincluded in the invention. Further, the combination of the embodimentsor the process sequence thereof may be appropriately set or variousmodifications in design may be added to the embodiments based on theknowledge of the person skilled in the art. An embodiment having suchmodifications may be also included in the scope of the invention.

Hereinafter, another aspect of the invention will be described accordingto embodiments.

In the above-described high energy ion implanter, each device includedin at least the beam transportation unit is of the electric field type,and hence the configuration of the device may be simplified or the powersupply may have a low output.

FIG. 16A is a top view illustrating a schematic configuration from thebeam focusing/defocusing device 32 to the beam scanner 34 according tothe embodiment, and FIG. 16B is a side view illustrating a schematicconfiguration from the beam focusing/defocusing device 32 to the beamscanner 34 according to the embodiment.

As illustrated in FIGS. 16A and 16B, the electric field type beamscanner 34 includes a pair of deflection electrodes 87 a and 87 b.Further, a ground shielding plate 89 is disposed above and below thedeflection electrodes 87 a and 87 b. The ground shielding plate 89prevents the secondary electrons accompanied by the beam from flowing tothe electrode of the beam scanner 34 from the outside. When the gapbetween the parallel portions of the pair of deflection electrodes 87 aand 87 b from the outside is indicated by W₁ and the length of each ofthe deflection electrodes 87 a and 87 b in the beam traveling directionis indicated by L₁, a relation of L₁≧5W₁ may be satisfied. Further, thepower supply (the amplifier) may be operated at an arbitrary scanfrequency of 0.5 Hz to 4 kHz. Further, when the gap between the pair ofdeflection electrodes 87 a and 87 b without parallel portions isindicated by D₁, a relation of L₁≧5D₁ may be satisfied.

Generally, in order to sufficiently deflect the high energy beam, thebeam needs to pass through a high electric field by a long distance. Inorder to form the high electric field, there is a need to use highvoltage or narrow the electrode gap. Further, the beam scanner needs touse a high-voltage power supply capable of changing the voltage at thefrequency of about 1 kHz, but it is generally difficult to output a highvoltage in this kind of power supply. Thus, there is a need to narrowthe gap between the deflection electrodes in the beam scanner.

The gap between the deflection electrodes 87 a and 87 b needs to belarger than the width of the passing beam. Accordingly, the minimum gapof the electrode is determined. Further, the length of the electrode isdetermined by the beam energy, the electric field, and the deflectionangle. Further, the beam energy is determined by the specification ofthe device. The electric field is determined by the above-describedcondition. Thus, the length of the electrode is determined by thedetermination of the deflection angle.

For example, in the beam scanner according to the embodiment, the gapbetween the left and right scanner electrodes is set to about 60 mm (thewithstanding voltage between the electrodes does not cause any problemon the assumption that the maximum beam size is 40 mm), and the width ofthe scanner electrode in the beam traveling direction is set to about460 mm. Further, the scan voltage is ±30 kV and the scan frequency isabout 0.5 Hz to 4 kHz.

When the gap between the parallel portions of the pair of deflectionelectrodes 87 a and 87 b in the electric field type beam scanner 34 isindicated by W₁ and the height of the deflection electrode is indicatedby H₁, a relation of H₁≧1.5W₁ may be satisfied. For the uniform scan ofthe beam in the entire region, the electric field in the scanner needsto be uniform in the vertical direction. Therefore, when the deflectionelectrode having a sufficiently high electrode height is used, theelectric field may be made uniform.

The deflection electrode 87 a (87 b) has a rectangular long plate shape,and a surface thereof facing the other deflection electrode 87 b (87 a)is formed as a plane or a curved surface. Then, the outer surfaceopposite to the facing surface may have a step shape.

Further, the facing surface of the deflection electrode 87 a (87 b) withrespect to the other deflection electrode 87 b (87 a) is formed as adouble-stage plane, and the outer surface opposite to the facing surfacemay have a step shape. Accordingly, the processability (themanufacturability) is improved. In this way, since the outer surface hasa simple plane structure, the processing cost may be reduced. Further,when the outer surface has a step shape and is further subjected to thegrinding, the weight of the component decreases, and hence the burden ofthe worker during the attachment work may be reduced.

Further, the surface of the deflection electrode 87 b (87 a) facing theother deflection electrode 87 b (87 a) may be formed as a step processedin a saw edge shape. Accordingly, the metal contamination may besuppressed.

Furthermore, as described above, it is desirable that the gap betweenthe deflection electrodes of the beam scanner be narrow. However, sincethe scanned beam has a width, the beam collides with the electrode whenthe electrode gap is too narrow. Therefore, the upstream shape of thepair of deflection electrodes is formed in a straight structure in whichthe deflection electrodes are parallel to each other so that theupstream gap having a non-widened scan width is narrowed, and the pairof deflection electrodes is formed in a shape which is widened by about±5° toward the downstream side in which the scan width is widened. Thewidened portion may have a curved shape or a step shape, but thestraight structure may be more simply made at low cost.

The high energy ion implanter 100 includes an upstream ground electrode78 a and a downstream ground electrode 78 b which are disposed at thedownstream side of the beamline of the electric field type beam scanner34 and each of which has an opening in the ion beam passage region and asuppression electrode 74 which is disposed between the upstream groundelectrode 78 a and the downstream ground electrode 78 b.

FIG. 17 is a schematic view illustrating a relation in size among theopening width of the downstream ground electrode, the opening width ofthe suppression electrode, and the opening width of the upstream groundelectrode. When the width of an opening 78 a 1 of the upstream groundelectrode 78 a is indicated by W₁, the width of an opening 74 a 1 of thesuppression electrode 74 is indicated by W₂, and the width of an opening78 b 1 of the downstream ground electrode 78 b is indicated by W₃, theelectrodes may be formed so as to satisfy a relation of W₁≦W₂≦W₃. Sincethe scanned beam is widened in the lateral direction as it goes towardthe downstream side, the scanned beam may not collide with the memberswhen the opening widths of the suppression electrode 74 and the groundelectrodes 78 a and 78 b are formed so as to satisfy the above-describedrelation.

As illustrated in FIG. 16A, the electric field type beam scanner 34 mayhave a deflection angle of ±5° or less. Accordingly, the incident anglewith respect to the downstream electric field type beam collimator 36(see FIGS. 6A and 6B) decreases, and hence the occurrence of theaberration is suppressed. The aberration (the focal distance differencebetween the center and the end of the beam collimator) increases inproportional to the incident angle squared.

A beam drift space 96 that decreases the deflection angle of theelectric field type beam scanner 34 is provided between the electricfield type beam scanner 34 and the electric field type beam collimator36. Accordingly, the gap between the electric field type beam scanner 34and the electric field type beam collimator 36 may be widened. For thisreason, even when the deflection angle of the electric field type beamscanner 34 is small, the scanned beam is sufficiently widened until thebeam reaches the electric field type beam collimator 36. For thisreason, it is possible to ensure a scan range having a sufficient widthwhile suppressing the aberration of the beam in the electric field typebeam collimator 36.

A vacuum container 91 that accommodates the electric field type beamscanner 34 and is provided with the beam drift space 96 and a vacuumpump (not illustrated) that is connected to the vacuum container 91 andexhausts a gas inside the vacuum container may be provided. For example,a turbo molecular pump for ensuring the vacuum degree may be provided atthe position of the electric field type beam scanner, and a turbo pumpmay be disposed directly below the electric field type beam scanner.Accordingly, the beamline vacuum degree of the electric field type beamscanner 34 may be ensured. Further, the outgas that is generated by thecollision of the ions with respect to the electrode or the aperture nearthe electric field type beam scanner 34 may be efficiently exhausted. Inthis way, when the generated gas may be removed as much as possible inthe vicinity of the gas generation source, the amount of the gas that isdispersed in the vicinity thereof may be decreased. Further, if there isno unnecessary gas, the beam may pass without the interference of thegas, and hence the beam transportation efficiency is improved.

The electric field type beam collimator 36 (see FIGS. 6A and 6B) isformed so that a focal point F is located in an area between the pair ofdeflection electrodes 87 a and 87 b included in the electric field typebeam scanner 34 disposed at the upstream side by interposing the beamdrift space 96. When the scan range is uniform, the aberration of thebeam collimator is inverse proportional to the square of the focaldistance. For this reason, the aberration may be suppressed by theinstallation of the beam collimator 36 having a long focal distance.

FIG. 18 is a schematic view illustrating another example of the beamcollimator. An electric field type multistage beam collimator 136illustrated in FIG. 18 includes multistage collimating lenses 84 a, 84b, and 84 c. Accordingly, since the scanned beam may be graduallycollimated, the gap between the electric field type beam scanner 34 andthe electric field type beam collimator 136, for example, the length ofthe beam drift space 96 may be shortened. For this reason, the entirelength of the beamline may be shortened.

As illustrated in FIG. 1, the high energy ion implanter 100 according tothe embodiment forms a high energy ion implantation beamline by a firstsection that includes the high energy multistage linear accelerationunit 14 and the ion beam generation unit 12 with the ion source 10 andincludes the elongated trajectory, a second section that changes thedirection of the beam by the deflection portion including the beamdeflection unit 16, and a third section that includes the beamtransportation line unit 18 and the elongated trajectory, and the firstsection and the third section are disposed so as to face each other,thereby forming the layout of the U-shaped apparatus having facing longline portions.

Further, as illustrated in FIGS. 5A and 5B, the high energy ionimplanter 100 has a configuration in which an injector faraday cup 80 athat measures the total beam current of the ion beam is provided betweenthe ion beam generation unit 12 and the high energy multistage linearacceleration unit 14 so as to be inserted into and extracted from thebeamline.

Similarly, a resolver-faraday cup 80 b that measures the total beamcurrent of the ion beam is provided between the beam deflection unit 16and the beam transportation line unit 18 so as to be inserted into andextracted from the beamline.

Further, as illustrated in FIG. 1, the high energy ion implanter 100further includes a substrate processing/supplying unit 20 that isdisposed at the downstream side of the beam transportation line unit 18and performs the ion implantation process. As illustrated in FIGS. 6Aand 6B, a fixed lateral elongated faraday cup 126 that measures thetotal beam current of the ion beam is provided behind the ionimplantation position of the substrate processing/supplying unit 20.

Further, as illustrated in FIG. 1 and the like, the high energy ionimplanter 100 is configured to generate a beam having a uniform beamfocusing/defocusing amount, a small trajectory deviation, and uniformdirectivity by adjusting the extraction electrode device (the extractionelectrode 40: see FIGS. 2A and 2B) that includes the beam directionadjustment portion provided in the ion beam generation unit 12, theadjustment portion (the lateral focusing lens 64 a and the longitudinalfocusing lens 64 b: see FIGS. 5A and 5B) that is provided inside thetermination end of the high energy multistage linear acceleration unit14 and adjusting the beam directivity and the focusing/defocusingdegree, the electric field type high energy beam adjustment portion (theorbit adjusting quadrupole lens 26: see FIGS. 5A and 5B) provided in theenergy analysis unit (the beam deflection unit 16: see FIG. 1), and theelectric field type beam focusing/defocusing device 32 and the electricfield type beam collimator 36 that are provided in the beamtransportation line unit 18, and to supply the beam to the electricfield type beam scanner 34.

As illustrated in FIGS. 16A and 16B, the electric field type beamscanner 34 may be configured to temporarily dump the beam in a mannersuch that the ion beam is deflected toward the further outside of thenormal scan range and is led to any one of the left and right beam dumpportions 95 a and 95 b disposed at the front side of the electric fieldtype beam collimator 36.

Further, the electric field type beam scanner 34 is configured to applyan offset voltage (a constant voltage for causing a position where theelectric field becomes zero to deviate from the horizontal center) forcorrecting the horizontal deflection of the scan range. Further, thebeam scanner 34 constitutes a part of a system that finely adjusts theimplantation angle and the implantation position by determining theoffset voltage based on the back calculation obtained from the beampositional deviation when the beam adjusted to pass through the vicinityof the center of the electric field type beam scanner 34 reaches thewafer.

In the above-described embodiment, the electric field type beamcollimator has been described as an example, but a magnetic field typebeam collimator may be employed if necessary.

FIG. 19 is a schematic view illustrating a beam current adjuster 300according to an embodiment of the invention. Although it will bespecifically described below, the beam current adjuster 300 includes avariable aperture 302 (or a variable aperture device 302) and a controldevice 304.

The beam current adjuster 300 is provided in the high energy ionimplanter 100 having the high energy multistage linear acceleration unit14. The beam current adjuster 300 is disposed between the ion beamgeneration unit 12 and the high energy multistage linear accelerationunit 14. The high energy multistage linear acceleration unit 14 may havea similar configuration to the configuration which is described withreference to FIGS. 1 and 3 and the like. The ion beam generation unit 12may have a similar configuration to the configuration which is describedwith reference to FIGS. 1 and 2A and the like. Further, as describedabove, the high energy ion implanter 100 may include the beam deflectionunit 16 that redirects the high energy ion beam accelerated by the highenergy multistage linear acceleration unit 14 toward a substrate.

In FIG. 19, the center orbit of the ion beam is indicated by thereference numeral L similarly to FIG. 5A. The center orbit L is depictedby the one-dotted chain line. Hereinafter, for the convenience ofdescription, the direction along the center orbit L in the high energymultistage linear acceleration unit 14 may be referred to as the Zdirection. Then, the Z direction may be called the ion beamtransportation direction. In the Z direction, the side which is close tothe ion source 10 may be referred to as the upstream side, and the sidewhich is away from the ion source 10 may be referred to as thedownstream side. In the embodiment, the Z direction is located withinthe horizontal plane. In the horizontal plane, a direction which isperpendicular to the Z direction may be referred to as the Y direction,and a direction which is perpendicular to the Z direction and the Ydirection may be referred to as the X direction. Further, the Xdirection may be referred to as the horizontal direction, and the Ydirection may be referred to as the vertical direction.

The entrance of the high energy multistage linear acceleration unit 14is provided with a beam current detector, for example, an injectorfaraday cup 80 a, which may be disposed at the downstream side of thevariable aperture 302 to measure a beam current. The beam currentdetector may enter or exit the center orbit L, and is configured toreceive the entirety (that is, the entire XY cross-section of the beam)of the ion beam when the beam current detector is disposed at the centerorbit L for the measurement. Thus, the beam current detector isconfigured to measure the total amount of the beam current.

Further, an entrance Q-lens 174 is provided at the downstream side ofthe injector faraday cup 80 a in the entrance of the high energymultistage linear acceleration unit 14. The entrance Q-lens 174 may be abeamline component which is disposed at the most upstream side of thehigh energy multistage linear acceleration unit 14. Here, the beamlinecomponent means a component of the high energy ion implanter 100 whichapplies an electric and/or magnetic action to the ion beam to perform,for example, operations including a deflecting operation, anaccelerating operation, a decelerating operation, a focusing/defocusingoperation, a scanning operation, and the like. The radio frequencyresonator 14 a (see FIG. 3) is provided at the downstream side of theentrance Q-lens 174.

The ion beam generation unit 12 includes at least one beamlinecomponent, for example, the mass analyzer 22. As shown, the bendingorbit of the mass analysis magnet 22 a is within the XZ plane. The massanalysis magnet 22 a is configured to form an ion beam focus point P atthe upstream side of the high energy multistage linear acceleration unit14 as depicted by the dashed line.

The ion beam focus point P is formed between the mass analysis magnet 22a and the beamline component at the downstream side thereof (forexample, the entrance Q-lens 174). Thus, “the upstream side of the highenergy multistage linear acceleration unit 14” where the focus point Pis formed may include the most upstream portion or the entrance of thehigh energy multistage linear acceleration unit 14. That is, the focuspoint P is located outside the high energy multistage linearacceleration unit 14 in FIG. 19, but the focus point P may be locatedinside the high energy multistage linear acceleration unit 14 (forexample, the entrance of the high energy multistage linear accelerationunit 14).

FIG. 20 is a view illustrating an ion beam cross-section 306 at the ionbeam focus point P. The ion beam cross-section 306 illustrated in FIG.20 is the cross-section of the ion beam at a plane passing through thefocus point P and perpendicular to the ion beam transportation direction(that is, the XY plane).

The mass analysis magnet 22 a focuses the ion beam at the focus point Pin the horizontal direction (that is, the X direction). Thus, the focuspoint P is a horizontal beam focus point.

Thus, the ion beam cross-section 306 has an elongated shape in thevertical direction (the Y direction). The ion beam cross-section 306 hasa first beam width W1 and a second beam width W2 in the horizontaldirection and the vertical direction, respectively, at the focus pointP. The second beam width W2 is longer than the first beam width W1. Asshown, the shape of the ion beam cross-section 306 is, for example, anellipse. The first beam width W1 corresponds to the shortest diameter ofthe ellipse, and the second beam width W2 corresponds to the longestdiameter of the ellipse.

In FIG. 20, the intensity distribution of the ion beam cross-section 306is depicted by the contour line. Further, the Y-direction intensitydistribution 308 corresponding to the contour line is expressed at theright side of the ion beam cross-section 306, and the X-directionintensity distribution 310 is expressed at the lower side of the ionbeam cross-section 306. As understood from the drawing, the gradient ofthe Y-direction intensity distribution 308 at the outer peripheralportion of the ion beam cross-section 306 is smaller than the gradientof the X-direction intensity distribution 310 at the outer peripheralportion of the ion beam cross-section 306.

Further, in FIG. 20, the vertical beam width limitation, which may bereferred to as a vertical regulation, according to the embodiment isschematically depicted by solid arrows V, and the horizontal beam widthlimitation, which may be referred to as a horizontal regulation, isschematically depicted by dashed arrows H. This will be described indetail later.

As illustrated in FIG. 19, the mass analyzer 22 includes the massanalysis slit 22 b. In the embodiment, the mass analysis slit 22 b isfixed, and hence the slit position and the slit width of the massanalysis slit 22 b are fixed. The mass analysis slit 22 b is disposed atthe focus point P in the Z direction. With respect to the location inthe XY plane, the mass analysis slit 22 b is disposed so that theaperture center thereof coincides with the center orbit L. Thehorizontal slit width of the mass analysis slit 22 b is set so that adesired mass resolution is obtained. Further, the slit shape of the massanalysis slit 22 b may conform with the shape of the ion beamcross-section 306 at the focus point P, for example. Accordingly, theslit shape of the mass analysis slit 22 b may have an ellipsoidal shapeextending along the vertical direction.

Furthermore, in an embodiment, the mass analyzer 22 may include aplurality of mass analysis slits 22 b. The plurality of mass analysisslits 22 b may include slits having different positions and/or widths.Further, the plurality of mass analysis slits 22 b may have slits havingdifferent shapes. One slit which is selected from the plurality of massanalysis slits 22 b may be used while being disposed at the center orbitL.

Further, in an embodiment, the mass analysis slit 22 b may be of avariable type. In this case, the mass analysis slit 22 b may beconfigured so that the slit position and/or the slit width areadjustable in the ion beam focusing direction at the focus point P, forexample. The adjustment of the slit position and/or the slit width maybe used for the horizontal regulation of the ion beam.

The beam current adjuster 300 is disposed between two adjacent beamlinecomponents (for example, the mass analysis magnet 22 a and the entranceQ-lens 174). The variable aperture 302 of the beam current adjuster 300is disposed immediately downstream of the mass analysis slit 22 b. Thevariable aperture 302 is disposed so as to contact the mass analysisslit 22 b at the downstream side of the mass analysis slit 22 b or isdisposed so as to be adjacent thereto with a slight gap therebetween. Inthis way, the variable aperture 302 is disposed near the focus point P.Furthermore, the variable aperture 302 may be disposed at the focuspoint P. In that case, the mass analysis slit 22 b may be disposedimmediately upstream of the variable aperture 302 and near the focuspoint P.

Here, a way of disposing of the variable aperture 302 “immediatelydownstream of the mass analysis slit 22 b” means that no beamlinecomponent (that is, the component which applies an electric and/ormagnetic action to the ion beam as described above) is provided betweenthe mass analysis slit 22 b and the variable aperture 302. Thus, thevariable aperture 302 may be disposed at any position in the Z directionbetween the mass analysis slit 22 b and the high energy multistagelinear acceleration unit 14 (or the entrance Q-lens 174). In this way,the variable aperture 302 is disposed at the focus point P or thevicinity thereof.

FIGS. 21A and 21B are schematic views illustrating the variable aperture302 according to the embodiment. FIG. 21A illustrates a state where thevariable aperture 302 is opened, and FIG. 21B illustrates a state wherethe variable aperture 302 is closed by a certain degree.

The variable aperture 302 includes a pair of aperture plates 312 whichare configured to be movable in the Y direction. As depicted by arrows Vin the drawing, the pair of aperture plates 312 are configured to bemovable in a symmetric manner with respect to the horizontal planeincluding the center orbit L, and the variable aperture 302 is providedwith a drive unit (not illustrated) for this configuration. That is,when one of the aperture plates 312 moves by a certain distance in the+Y direction towards the center orbit L, the other of the apertureplates 312 moves by the certain distance in the −Y direction towards thecenter orbit L. In this way, the pair of aperture plates 312 moves bythe same distance in the opposite directions.

The variable aperture 302 may be, for example, a CVA (ContinuouslyVariable Aperture). One configuration example of CVA is disclosed in,for example, JP 2000-243341 A and JP 2000-243342 A, the entire contentsof which are incorporated herein by reference.

Furthermore, in an embodiment, the variable aperture 302 may include atleast one aperture plate which is configured to be movable in adirection perpendicular to the ion beam focusing direction at the focuspoint P. Thus, the variable aperture 302 may include, for example, apair of aperture plates having a fixed aperture plate and a movableaperture plate configured to be movable in a direction perpendicular tothe focusing direction.

Further, in an embodiment, the variable aperture 302 may include atleast one aperture plate which is configured to be rotatable about arotation axis parallel to the ion beam focusing direction andperpendicular to the transportation direction.

As illustrated in FIGS. 21A and 21B, an aperture width 314 is formedbetween the aperture plates 312 so that an ion beam passes through theaperture width. When the aperture plates 312 move, the aperture width314 is changed. Since the aperture plates 312 move in the Y direction asdescribed above, the aperture width 314 is variable in the Y direction.When the ion beam passes through the aperture width 314, the beam widthin the Y direction is limited. That is, both ends (the outer portionbeyond the aperture width 314) of the ion beam cross-section 306 (seeFIG. 20) in the Y direction are shielded by the aperture plates 312, andthe center portion of the ion beam cross-section 306 corresponding tothe aperture width 314 is directed toward the downstream side of thebeamline.

In this way, the beam current of the ion beam which passes through andexits the variable aperture 302 is reduced compared to that of the ionbeam which enters the variable aperture 302. Thus, when the aperturewidth 314 is changed, the beam current may be adjusted. The ion beampassing through the variable aperture 302 and thereby allowing the ionbeam to have the beam width adjusted in a direction perpendicular to thefocusing direction is supplied to the high energy multistage linearacceleration unit 14 (see FIG. 19).

The high energy ion implanter 100 according to the embodiment isconfigured to determine the implanting beam current by the variableaperture 302. The high energy ion implanter 100 is designed so that thebeam current amount implanted to the substrate is determined in responseto the aperture width 314. Thus, the ion beam may be controlled so thata desired implanting beam current is applied to the substrate by anappropriate setting of the aperture width 314.

The variable aperture 302 is configured to determine the implanting beamcurrent based on the beam current measured by the beam current detector,for example, the lateral elongated faraday cup 126. For that reason, thecontrol device 304 (see FIG. 19) is configured to set the aperture width314 based on a measured current of the beam current detector. Forexample, the control device 304 is configured to change the aperturewidth 314 so that the measured current matches a target implanting beamcurrent. Here, the implanting beam current means the beam current amountwhich is implanted into a substrate (for example, the wafer 200illustrated in FIG. 1), that is, the beam current amount at thesubstrate level (in other words, the substrate surface).

Furthermore, the control device 304 may be a control unit forcontrolling the high energy ion implanter 100 or a part of the controlunit. Further, the control device 304 may be a controller dedicated forthe beam current adjuster 300 which is provided separately from thecontrol unit.

In a typical arrangement, the ion beam is transported as a beam having across-section vertically elongate along the direction perpendicular to aplane including the bending orbit of the mass analysis magnet. Ahorizontal width limitation aperture is disposed at the exit of the massanalysis magnet to determine the mass resolution of the mass analysismagnet. The horizontal width limitation aperture provides not only thefunction of determining the mass resolution but also a function ofadjusting the beam current. Accordingly, the resultant beam current isadjusted by the horizontal regulation.

Thus, in such a typical arrangement, the adjustment of the apertureneeds to be performed in consideration of both the mass resolution andthe resultant beam current, and it is not easy to optimally set theaperture along with these factors. For example, when the aperture isnarrowed in order to realize a fine mass resolution, the beam current isdecreased. Thus, it is difficult to simultaneously obtain both the finemass resolution and the large beam current.

Further, as described above by referring to FIG. 20, since thehorizontal intensity distribution of the vertically elongate beam has alarge gradient, the beam current is sensitive with respect to thehorizontal aperture width. Since a large change in beam current occursdue to a slight change in horizontal width, the beam current may not beeasily controlled at a target beam current.

Furthermore, when the center of the horizontal aperture width isdeviated from the beam center, the beam is asymmetrically shielded atthe right and left sides. Hence the beam having passed through theaperture has a new beam center at a position different from the beam notyet having passed therethrough. Since the gradient of the horizontalintensity distribution of the beam is large, the positional deviationamount of the beam center may be easily increased between before andafter the beam passes through the aperture. In order to decrease thepositional deviation amount, there may be a need to perform a beamadjustment operation so that the center of the horizontal aperture widthis aligned to the beam center of the beam not yet having passed throughthe aperture. Since such an operation consumes the time which may beused for the ion implanting process on the wafer 200, the productivityof the apparatus is affected.

However, in the embodiment, the variable aperture 302 is configured toadjust the beam width in a direction perpendicular to the ion beamfocusing direction at the focus point P in order to control theimplanting beam current. The implanting beam current is adjusted by thevertical regulation of the variable aperture 302. As described above byreferring to FIG. 20, since the gradient of the vertical intensitydistribution at the outer peripheral portion of the ion beamcross-section 306 is smaller than the gradient of the horizontalintensity distribution at the outer peripheral portion of the ion beamcross-section 306, the implanting beam current moderately changes with achange in the aperture width 314. Further, the variable aperture 302 isprovided separately from the mass analysis slit 22 b.

Thus, according to the embodiment, the implanting beam current may beeasily adjusted to the target implanting beam current by the change ofthe aperture width 314. Since the vertical regulation is employed, thecontrollability of the implanting beam current is improved.

Further, according to the embodiment, since the implanting beam currentmay be adjusted independently from the mass resolution, both factors maybe optimally set.

Furthermore, according to the embodiment, since the positional deviationamount between the beam center of the beam having passed through theaperture and the beam center of the beam not yet having passed throughthe aperture comparatively decreases, it is advantageous in that theabove-described beam adjustment operation may not be needed. Thepositional deviation amount of the beam centers involves with thepositional error and/or the angular error of the beam at the substratelevel. An initial amount of the positional deviation may cause a largeerror at the substrate level as the beam transportation distanceincreases. Thus, a small amount of the positional deviation isadvantageous in an implanter with a long beamline as in the high energyion implanter 100.

A further advantage is obtained when the beam width is limited, as inthe embodiment, in a direction perpendicular to the focusing direction,that is, a direction in which the gradient of the intensity distributionof the ion beam cross-section 306 is small. The advantage may be thatthe beam current amount of the ion beam exiting from the beam currentadjuster 300 may be insensitive to fluctuations in the ion beam enteringinto the beam current adjuster 300. It should be appreciated that theeffect on the vertical intensity distribution of the ion beamcross-section 306 is always reduced compared to the effect on thehorizontal intensity distribution when the fluctuations occur in e.g.,the ion source 10.

Thus, according to the embodiment, since the beam current at thesubstrate level may be adjusted in a short time without degrading otherbeam quality such as mass resolution, it is possible to provide an ionimplanter which contributes to the improvement in productivity.Particularly, in the high energy ion implanter 100 of single wafer type,the productivity may be improved.

In an embodiment, the beam current adjuster 300 may be adapted forconsecutive or sequential implanting processes (so-called chainedimplant) in which only the beam current amount is changed on aprocess-by-process basis. Accordingly, in a case where only theimplanting beam current is changed from a first implanting recipe for afirst ion implanting process to a second implanting recipe for asubsequent second ion implanting process, the control device 304 may beconfigured to adjust the beam width by using the variable aperture 302in a direction perpendicular to the focusing direction at an intervalbetween the first ion implanting process and the second ion implantingprocess and to perform the second ion implanting process directlysubsequent to the first ion implanting process. In this way, since thesubsequent ion implanting process may be started without stopping theimplanting process for the beam adjustment operation, this is helpfulfor the improvement in the productivity.

Furthermore, in this case, the control device 304 may be configured toperform the second ion implanting process subsequently after the firstion implanting process by adjusting at least one implanting conditionother than the implanting beam current if necessary between the firstion implanting process and the second ion implanting process.

As described above, the invention has been described based on theembodiments. The invention is not limited to the above-describedembodiments, and it is understood by the person skilled in the art thata design may be changed in various forms, various modified examples maybe employed, and the modified examples are also included in the scope ofthe invention.

In the above-described embodiments, the beamline component which formsthe ion beam focus point P is disposed at the upstream side of the highenergy multistage linear acceleration unit 14, but the invention is notlimited thereto. In an embodiment, the beamline component which formsthe ion beam focus point may be disposed at the downstream side of thehigh energy multistage linear acceleration unit 14, and the variableaperture may be provided at the focus point or the vicinity thereof.

For example, the variable aperture 302 of the beam current adjuster maybe disposed between the high energy multistage linear acceleration unit14 and a beam focusing/defocusing device 32 which is provided for thehigh energy ion beam accelerated by the high energy multistage linearacceleration unit 14. In this case, as illustrated in FIG. 22, thevariable aperture 302 is disposed immediately downstream of the energyanalysis slit 28.

Further, the variable aperture 302 of the beam current adjuster may bedisposed between the high energy multistage linear acceleration unit 14and a beam scanner 34 which is provided for the high energy ion beamaccelerated by the high energy multistage linear acceleration unit 14.In this case, as illustrated in FIG. 23, the variable aperture 302 maybe disposed between a ground electrode 76 a of the beam scanner 34 and ascanning electrode 316.

In the above-described embodiments, the variable aperture 302 isdisposed immediately downstream of the mass analysis slit 22 b, but theinvention is not limited thereto. In an embodiment, the variableaperture 302 may be disposed between the mass analysis magnet 22 a andthe mass analysis slit 22 b. In this case, the variable aperture 302 maybe disposed immediately upstream of the mass analysis slit 22 b, forexample.

In the above-described embodiments, the beam current adjuster 300 isprovided in the high energy ion implanter 100, but the invention is notlimited thereto. In an embodiment, the beam current adjuster 300 may beprovided in an ion implanter which does not have the high energymultistage linear acceleration unit 14.

It should be understood that the invention is not limited to theabove-described embodiment, but may be modified into various forms onthe basis of the spirit of the invention. Additionally, themodifications are included in the scope of the invention.

What is claimed is:
 1. A high energy ion implanter comprising: a highenergy multistage linear acceleration unit; a beamline componentarranged upstream or downstream of the high energy multistage linearacceleration unit to form a focus point of an ion beam; and a variableaperture device disposed at the focus point or a vicinity thereof toadjust a beam width of the ion beam in a direction perpendicular to afocusing direction of the ion beam at the focus point in order tocontrol an implanting beam current.
 2. The high energy ion implanteraccording to claim 1, wherein the beamline component is arranged so thatthe focus point is formed upstream of the high energy multistage linearacceleration unit, wherein the variable aperture device is disposeddownstream of the beamline component so that the ion beam having thebeam width adjusted in the direction perpendicular to the focusingdirection as a result of passing through the variable aperture device issupplied to the high energy multistage linear acceleration unit.
 3. Thehigh energy ion implanter according to claim 1, wherein the beamlinecomponent is a mass analyzer comprising a mass analysis slit, and thevariable aperture device is disposed immediately downstream of the massanalysis slit.
 4. The high energy ion implanter according to claim 1,further comprising a control device that adjusts the beam width in thedirection perpendicular to the focusing direction by using the variableaperture device at an interval between a first ion implanting processand a subsequent second ion implanting process and performs the secondion implanting process directly subsequent to the first ion implantingprocess in a case where the implanting beam current is changed from afirst implanting recipe for the first ion implanting process to a secondimplanting recipe for the second ion implanting process.
 5. The highenergy ion implanter according to claim 1, further comprising a beamfocusing/defocusing device provided for a high energy ion beamaccelerated by the high energy multistage linear acceleration unit,wherein the variable aperture device is disposed between the high energymultistage linear acceleration unit and the beam focusing/defocusingdevice.
 6. The high energy ion implanter according to claim 1, furthercomprising a beam scanner provided for a high energy ion beamaccelerated by the high energy multistage linear acceleration unit,wherein the variable aperture device is disposed between the high energymultistage linear acceleration unit and the beam scanner.
 7. The highenergy ion implanter according to claim 1, wherein the implanting beamcurrent is determined by the variable aperture device.
 8. The highenergy ion implanter according to claim 7, further comprising a beamcurrent detector that may be arranged downstream of the variableaperture device to measure the implanting beam current, wherein thevariable aperture device determines the implanting beam current based ona measured beam current of the beam current detector.
 9. The high energyion implanter according to claim 1, wherein the variable aperture deviceis disposed immediately upstream of a mass analysis slit.
 10. The highenergy ion implanter according to claim 3, wherein the mass analysisslit includes a fixed slit.
 11. The high energy ion implanter accordingto claim 3, wherein a slit position and/or a slit width of the massanalysis slit is adjustable in the focusing direction.
 12. The highenergy ion implanter according to claim 1, wherein the variable aperturedevice comprises at least one aperture plate arranged movable in thedirection perpendicular to the focusing direction.
 13. The high energyion implanter according to claim 1, further comprising a high energybeam deflection unit that redirects a high energy ion beam acceleratedby the high energy multistage linear acceleration unit toward asubstrate.
 14. Abeam current adjuster for an ion implanter comprising avariable aperture device disposed at a focus point of an ion beam or avicinity thereof to adjust a beam width of the ion beam in a directionperpendicular to a focusing direction of the ion beam at the focus pointin order to control an implanting beam current.
 15. The beam currentadjuster according to claim 14, wherein the variable aperture device isdisposed immediately downstream of a mass analysis slit.
 16. A beamcurrent adjustment method for a high energy ion implanter with a highenergy multistage linear acceleration unit, comprising: focusing an ionbeam at a focus point formed upstream or downstream of the high energymultistage linear acceleration unit; and adjusting a beam width of theion beam in a direction perpendicular to a focusing direction of the ionbeam by using a variable aperture device disposed at the focus point ora vicinity thereof in order to control an implanting beam current.